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NCE0117K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE0117K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE0117K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V, with threshold VGS(th) of 1.2V min to 2.5V max at ID=250μA.
2 D passive Drain (also the exposed tab); drain-source voltage rated 100V, continuous drain current 17A.
3 S passive Source; body diode forward current up to 17A, with RDS(ON) below 70mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 110 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 56 70 mΩ VGS=10V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 65 85 mΩ VGS=4.5V, ID=3A 2
Forward Transconductance gFS 12 S VDS=5V,ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=17A 2
Diode Forward Current IS 17 A 2
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 17 A TC=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 12 A TC=100℃ 1
Pulsed Drain Current IDM 60 A TC=25℃ 1
Maximum Power Dissipation PD 55 W TC=25℃ 1
Single pulse avalanche energy EAS 250 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 2.27 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec. 2
Input Capacitance Clss 1350 PF VDS=25V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 240 PF VDS=25V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 180 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 13.8 nS VDD=30V,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-on Rise Time tr 9.3 nS VDD=30V,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Delay Time td(off) 43.8 nS VDD=30V,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Fall Time tf 11.4 nS VDD=30V,RL=15Ω,VGS=10V,RG=2.5Ω 2
Total Gate Charge Qg 30 nC VDS=30V,ID=5A, VGS=10V 2
Gate-Source Charge Qgs 6.4 nC VDS=30V,ID=5A, VGS=10V 2
Gate-Drain Charge Qgd 8.6 nC VDS=30V,ID=5A, VGS=10V 2

CAD (KiCad official)

  • Symbol: NCE0117K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce0117k-etched.step / nce0117k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce0117k.step / nce0117k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 5a5e623cb54f232c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF