component
NCE0115K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404
{
"schema_version": 1,
"type": "component",
"slug": "nce0115k",
"title": "NCE0115K",
"brief": "Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"nce0115k",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "NCE0115K",
"manufacturer": "Wuxi NCE Power Semiconductor",
"package": "TO-252-2L",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203665623355392",
"parts": {
"symbol": "nce0115k.kicad_sym",
"footprint": "nce0115k.kicad_mod",
"model_3d": "nce0115k-hero.glb",
"model_3d_plain": "nce0115k-etched.glb",
"model_3d_step": "nce0115k-etched.step",
"model_3d_step_plain": "nce0115k.step",
"lbr": "nce0115k.lbr"
},
"distributor_links": {
"lcsc": "C108637"
},
"distributor_check": {
"checked_at": "2026-10-18T10:55:15Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate; controls the channel, with VGS rated ±20 V maximum and threshold of 1.0 V min to 2.5 V max at ID=250μA."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain, also the tab; VDS rated 100 V and continuous drain current 15 A at TC=25℃."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source; diode forward current IS is rated 15 A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The marking drawing shows the drain as the middle lead (labelled D) with the gate on the left and th",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 7,
"cost_usd": 0.1025,
"at": "2026-10-18T10:52:40"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203665623355392",
"pages": 7,
"sha256": "3c5e3f82ac3640ea",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "nce0115k.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "nce0115k-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "6c6a6d4bd068913722574968325d35f1ca797233c9c09f9f1564b3e2fa7efa11",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Wuxi NCE Power Semiconductor",
"Package": "TO-252-2L",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "3c5e3f82ac3640eae43010f2a59df69d3fd97c1685f52d7217de6e027a216c77",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 100,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current-Continuous",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 15,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current-Continuous",
"symbol": "ID (100℃)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 10.6,
"conditions": "TC=100℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 60,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 50,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 16,
"conditions": "Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ,TSTG",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 100,
"typ": 110,
"max": null,
"conditions": "VGS=0V ID=250μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=100V,VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS=±20V,VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1,
"typ": 1.6,
"max": 2.5,
"conditions": "VDS=VGS,ID=250μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 75,
"max": 90,
"conditions": "VGS=10V, ID=10A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 80,
"max": 100,
"conditions": "VGS=4.5V, ID=10A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.2,
"conditions": "VGS=0V,IS=15A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 15,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction-to-Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": 3,
"max": null,
"conditions": "Note 2 (surface mounted on FR4, t ≤ 10 sec) as printed in table header; value printed without min/typ/max designation",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"nce0115k"
],
"discovery_pitch": "NCE0115K (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"nce0115k.kicad_sym",
"nce0115k.kicad_mod",
"nce0115k.glb",
"nce0115k.step",
"nce0115k.lbr",
"docs/hero.png",
"docs/nce0115k-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"nce0115k-hero.glb",
"nce0115k-hero.overlay.json",
"nce0115k-etched.glb"
],
"visibility": {
"public": true
}
}