component
NCE0103M
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| nce0103m-etched.glb | 23d ago |
| nce0103m-etched.step | 23d ago |
| nce0103m-hero.glb | 23d ago |
| nce0103m-hero.overlay.json | 23d ago |
| nce0103m.glb | 23d ago |
| nce0103m.kicad_mod | 23d ago |
| nce0103m.kicad_sym | 23d ago |
| nce0103m.lbr | 23d ago |
| nce0103m.step | 23d ago |
| package.json | 23d ago |
| page.json | 16d ago |
| README.md | 16d ago |
NCE0103M
Wuxi NCE Power Semiconductor · MOSFETs · SOT-89-3L
NCE0103M from Wuxi NCE Power Semiconductor, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20V maximum and threshold of 1.0V min to 2.0V max at 250µA. |
| 2 | D | passive | Drain; rated for VDS of 100V and continuous drain current ID of 3A (20A pulsed). |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous diode forward current IS of 3A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 136 | 160 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 140 | 170 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=3A | 2 | ||
| Diode Forward Current | IS | 3 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed | IDM | 20 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 83 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
NCE0103M - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
nce0103m-etched.step/nce0103m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce0103m.step/nce0103m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
e2643944ccc36640, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).