component
NCD57085DR2G
Public Made by Adomby adom
onsemi Gate Drive ICs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNCD57085DR2G
onsemi · Gate Drive ICs · SOIC-8
NCD57085DR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Input side power supply (operating range UVLO1 to 20 V) that needs a good quality bypass capacitor to GND placed close to the pin. |
| 2 | IN | input | Non-inverted gate driver input with about 100 kΩ equivalent pull-down below 5.5 V, requiring a minimum pulse width before HO responds. |
| 3 | FLT | output | Active-low fault output with internal 50 kΩ pull-up that reports over current, UVLO1 or UVLO2 conditions and can be OR'ed with other drivers. |
| 4 | GND | power_in | Input side ground reference. |
| 5 | VS | power_in | Output side ground reference. |
| 6 | CS | bidirectional | Over current detection input for the IGBT with 0.25 V typical threshold that must be met for tFILTER before HO and FLT go low, with negative voltage capability down to -9 V. |
| 7 | HO | output | Driver output providing drive voltage and source/sink current (+7 A/-7 A peak) to the IGBT/FET gate, actively pulled low during start-up. |
| 8 | VB | power_in | Output side positive power supply (operating range UVLO2 to 30 V) that needs a good quality bypass capacitor to VS placed close to the pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| UVLO1 Output Enabled | VUVLO1-OUT-ON | 3.1 | V | VDD = 5 V, VBS = 15 V | 8 | ||
| UVLO1 Output Disabled | VUVLO1-OUT-OFF | 2.4 | V | VDD = 5 V, VBS = 15 V | 8 | ||
| UVLO1 Hysteresis | VUVLO1-HYST | 0.1 | V | 8 | |||
| UVLO2 Output Enabled | VUVLO2-OUT-ON | 12.4 | 12.9 | 13.4 | V | 8 | |
| UVLO2 Output Disabled | VUVLO2-OUT-OFF | 11.5 | 12 | 12.5 | V | 8 | |
| UVLO2 Hysteresis | VUVLO2-HYST | 0.7 | 1 | V | 8 | ||
| Input Supply Quiescent Current | IDD-0-3.3 | 2 | mA | IN = Low, VDD = 3.3 V, FLT = High | 8 | ||
| Input Supply Current, IN high | IDD-100-5 | 6 | mA | IN = High, VDD = 5 V, FLT = High | 8 | ||
| Output Supply Quiescent Current | IBS-0 | 4 | mA | IN = Low, no load | 8 | ||
| Output Supply Current, IN high | IBS-100 | 6 | mA | IN = High, no load | 8 | ||
| FLT Low Level Output Voltage | VFLT-L | 0.3 | V | IFLT = 5 mA | 8 | ||
| Input Pulse Width of IN for No Response | tMIN1 | 10 | ns | 8 | |||
| Input Pulse Width of IN for Guaranteed Response | tMIN2 | 40 | ns | 8 | |||
| Output Low State (VHO - VS) | VHOL1 | 0.1 | 0.22 | V | ISNK = 200 mA | 8 | |
| Output Low State (VHO - VS) | VHOL2 | 0.4 | 1 | V | ISNK = 1.0 A, TA = 25°C | 8 | |
| Output High State (VB - VHO) | VHOH1 | 0.2 | 0.35 | V | ISRC = 200 mA | 8 | |
| Output High State (VB - VHO) | VHOH2 | 0.6 | 1.7 | V | ISRC = 1.0 A, TA = 25°C | 8 | |
| CS Threshold Voltage | VCS-THR | 0.2 | 0.25 | 0.3 | V | 8 | |
| IGBT Short Circuit Clamping (VHO - VB) | VCLP-HO | 0.7 | 1.5 | V | IN = High, IHO = 500 mA, tCLP = 10 µs | 9 | |
| IN to HO High Propagation Delay | tPD-ON | 40 | 60 | 90 | ns | CLOAD = 10 nF, VIH to 10% of HO Change for PW > 150 ns | 9 |
| IN to HO Low Propagation Delay | tPD-OFF | 40 | 60 | 90 | ns | CLOAD = 10 nF, VIL to 90% of HO Change for PW > 150 ns | 9 |
| Propagation Delay Distortion | tDISTORT | -25 | 25 | ns | TA = -40°C to 125°C, PW > 150 ns | 9 | |
| Propagation Delay Distortion between Parts | tDISTORT_TOT | -30 | 0 | 30 | ns | PW > 150 ns | 9 |
| CS Leading Edge Blanking Time | tLEB | 200 | 450 | 700 | ns | 9 | |
| CS Threshold Filtering Time | tFILTER | 600 | 700 | ns | 9 | ||
| Soft Turn Off Time | tSTO | 1.2 | 1.8 | 3 | µs | CLOAD = 10 nF, RG = 10 Ω | 9 |
| Delay after tFILTER to FLT Low | tFLT | 100 | 450 | 700 | ns | 9 | |
| IN Mute Time after tFILTER, or UVLO1, UVLO2 Triggered | tMUTE | 20 | µs | 9 | |||
| Supply Voltage, Input Side (abs max) | VDD-GND | -0.3 | 22 | V | 7 | ||
| Supply Voltage, Output Side (abs max) | VB-VS | -0.3 | 32 | V | 7 | ||
| Gate-driver Output Voltage | VHO-VS | -0.3 | V | max VBS + 0.3 V | 7 | ||
| Gate-driver Output Sourcing Current | IPK-SRC | 7 | A | max pulse width = 10 µs, max duty cycle = 0.2%, VD - VS = 15 V | 7 | ||
| Gate-driver Output Sinking Current | IPK-SNK | 7.5 | A | max pulse width = 10 µs, max duty cycle = 0.2%, VD - VS = 15 V | 7 | ||
| Voltage at IN, FLT | VIN-GND | -0.3 | V | max VDD + 0.3 V | 7 | ||
| Output current of FLT | IFLT | 10 | mA | 7 | |||
| Voltage at CS | VCS-VS | -9 | V | max VBS + 0.3 V | 7 | ||
| Power Dissipation | PD | 1123 | mW | TA 25°C, TJ 150°C, 650 mm2, 1 oz copper, 2 surface layers and 2 internal power plane layers | 7 | ||
| ESD Human Body Model | ESDHBM | -2 | 2 | kV | 7 | ||
| ESD Charged Device Model | ESDCDM | -2 | 2 | kV | 7 | ||
| Maximum Junction Temperature | TJ(max) | -40 | 150 | °C | 7 | ||
| Storage Temperature Range | TSTG | -65 | 150 | °C | 7 | ||
| Lead Temperature Soldering Reflow, Pb-Free | TSLD | 260 | °C | 7 | |||
| Supply Voltage, Input Side (operating) | VDD-GND | 20 | V | min is UVLO1 | 7 | ||
| Supply Voltage, Output Side (operating) | VB-VS | 30 | V | min is UVLO2 | 7 | ||
| Logic Input Voltage at IN | VIN | 0 | V | GND to VDD | 7 | ||
| Common Mode Transient Immunity | /dVISO/dt/ | 100 | kV/µs | 7 | |||
| Ambient Temperature | TA | -40 | 125 | °C | 7 | ||
| Thermal Resistance, Junction-to-Air | RθJA | 179 | °C/W | 100 mm2, 1 oz Copper, 1 Surface Layer | 7 | ||
| Thermal Resistance, Junction-to-Air | RθJA | 110 | °C/W | 100 mm2, 1 oz Copper, 2 Surface Layers and 2 Internal Power Plane Layers | 7 | ||
| Peak Driver Current, Sink | IPK-SNK1 | 7.5 | A | 8 | |||
| Peak Driver Current, Source | IPK-SRC1 | 7 | A | 8 | |||
| Rise Time | tRISE | 10 | ns | CLOAD = 1 nF, 10% to 90% of HO Change | 9 | ||
| Fall Time | tFALL | 15 | ns | CLOAD = 1 nF, 90% to 10% of HO Change | 9 | ||
| CS Negative Voltage | VCS-NEG | -8 | V | ICS = 1.5 mA | 8 | ||
| Input-Output Isolation Voltage | VISO,INPUT-OUTPUT | 2500 | VRMS | TA = 25°C, RH < 50%, t = 1.0 minute, II-O < 30 µA, 50 Hz | 6 |
CAD (KiCad official)
- Symbol:
NCD57085DR2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ncd57085dr2g-etched.step/ncd57085dr2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncd57085dr2g.step/ncd57085dr2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (23 pp, sha256
93bf8773284ece5c, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).