component

MVGSF1N03LT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MVGSF1N03LT1G

onsemi · MOSFETs · SOT-23

MVGSF1N03LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the datasheet limits the gate-to-source voltage to ±20 V (VGS).
2 Source passive Source terminal of the MOSFET; the datasheet rates the source (body diode) continuous current IS at 2.1 A.
3 Drain passive Drain terminal of the MOSFET; the datasheet rates drain-to-source voltage VDSS at 30 V and continuous drain current ID at 2.1 A (TA = 25°C, steady state).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2.1 A Steady state, TA = 25°C 1
Continuous Drain Current ID 1.5 A Steady state, TA = 85°C 1
Power Dissipation PD 0.69 W Steady state, TA = 25°C 1
Continuous Drain Current (Note 1) ID 1.6 A Note 1; steady state; TA = 25°C 1
Continuous Drain Current (Note 1) ID 1.2 A Note 1; steady state; TA = 85°C 1
Power Dissipation (Note 1) PD 0.42 W Note 1; TA = 25°C 1
Pulsed Drain Current IDM 6 A tp = 10 s 1
ESD Capability (Note 3) ESD 125 V C = 100 pF, RS = 1500 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 2.1 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Foot, Steady State RθJL 180 °C/W Steady state 1
Junction-to-Ambient, Steady State (Note 1) RθJA 300 °C/W Steady state; Note 1 1
Junction-to-Ambient, t < 10 s (Note 1) RθJA 250 °C/W t < 10 s; Note 1 1
Junction-to-Ambient, Steady State (Note 2) RθJA 400 °C/W Steady state; Note 2 1
Drain-to-Source Breakdown Voltage V(BR)DSS 30 Vdc VGS = 0 Vdc, ID = 10 Adc 2
Zero Gate Voltage Drain Current IDSS 1 Adc VDS = 30 Vdc, VGS = 0 Vdc 2
Zero Gate Voltage Drain Current IDSS 10 Adc VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C 2
Gate-Body Leakage Current IGSS -100 100 nAdc VGS = ±20 Vdc, VDS = 0 Vdc 2
Gate Threshold Voltage VGS(th) 1 1.7 2.4 Vdc VDS = VGS, ID = 250 Adc 2
Static Drain-to-Source On-Resistance rDS(on) 0.08 0.1 Ω VGS = 10 Vdc, ID = 1.2 Adc 2
Static Drain-to-Source On-Resistance rDS(on) 0.125 0.145 Ω VGS = 4.5 Vdc, ID = 1.0 Adc 2
Continuous Current (Source-Drain Diode) IS 0.6 A 2
Pulsed Current (Source-Drain Diode) ISM 0.75 A 2

CAD (KiCad official)

  • Symbol: MVGSF1N03LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mvgsf1n03lt1g-etched.step / mvgsf1n03lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mvgsf1n03lt1g.step / mvgsf1n03lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 96849ff8fb35acfd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF