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Contents

README

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MURS360BJ

WeEn Semiconductors · Diodes - Fast Recovery Rectifiers · SMB

MURS360BJ from WeEn Semiconductors, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the ultrafast power diode, rated for a repetitive peak reverse voltage VRRM of 600 V and average forward current IF(AV) of 3 A (Tlead ≤ 105 °C).
2 A passive Anode of the ultrafast power diode; forward current flows from anode to cathode (pin 1).

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package SMB
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V 3
Crest working reverse voltage VRWM 600 V 3
Reverse voltage DC VR 600 V DC 3
Average forward current IF(AV) 3 A δ = 0.5; square-wave pulse; Tlead ≤ 105 °C; Fig. 1; Fig. 2; Fig. 3 3
Repetitive peak forward current IFRM 6 A δ = 0.5; tp = 25 μs; Tlead ≤ 105 °C; square-wave pulse 3
Non-repetitive peak forward current IFSM 100 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 3
Non-repetitive peak forward current IFSM 110 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 3
Storage temperature Tstg -65 175 °C 3
Junction temperature Tj 175 °C 3
Thermal resistance from junction to lead Rth(j-lead) 23 25 K/W mounted on a minimum footprint printed-circuit board (FR4); Fig. 5 5
Thermal resistance from junction to ambient free air Rth(j-a) 75 K/W mounted on a minimum footprint printed-circuit board (FR4) 5
Forward voltage VF 1.3 V IF = 3 A; Tj = 25 °C; Fig. 6 6
Forward voltage VF 0.88 1.05 V IF = 3 A; Tj = 150 °C; Fig. 6 6
Reverse current IR 3 μA VR = 600 V; Tj = 25 °C 6
Reverse current IR 1 mA VR = 600 V; Tj = 150 °C 6
Reverse charge Qr 122 nC IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
Reverse charge Qr 199 nC IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6
Reverse recovery time trr 50 ns IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C; Fig. 7 6
Reverse recovery time (step recovery) trr 50 ns IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C; Step recovery 6
Reverse recovery time trr 52 ns IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
Reverse recovery time trr 65 ns IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6
Peak reverse recovery current IRM 4.7 A IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
Peak reverse recovery current IRM 6.1 A IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6
Non-repetitive avalanche energy Eas 10.8 mJ IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH 6

CAD (KiCad official)

  • Symbol: MURS360BJ
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB (KiCad packages3D, STEP)
  • 3D model files: murs360bj-etched.step / murs360bj-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); murs360bj.step / murs360bj.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (10 pp, sha256 af4de9b8f8d0d0f2, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF