component
MURS260T3G-F
Public Made by Adomby adom
FUXINSEMI Fast Recovery / High Efficiency Diodes, SMB. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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MURS260T3G-F
FUXINSEMI · Fast Recovery / High Efficiency Diodes · SMB
MURS260T3G-F from FUXINSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 600 | V | 1 | |||
| Maximum RMS voltage | VRMS | 420 | V | 1 | |||
| Maximum continuous reverse voltage | VR | 600 | V | 1 | |||
| Maximum average forward rectified current | IO | 2 | A | 1 | |||
| Maximum reverse leakage current | IR | 5 | μA | at rated VR, TJ=25 °C | 1 | ||
| Maximum reverse leakage current | IR | 150 | μA | at rated VR, TJ=125 °C | 1 | ||
| Maximum reverse recovery time | trr | 50 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 1 | ||
| Typical junction capacitance | CJ | 15 | pF | 1 MHz, 4.0 VDC reverse | 1 | ||
| Storage temperature range | TSTG | -65 | 175 | °C | 1 | ||
| Operating junction temperature range | TJ | -55 | 175 | °C | 1 |
CAD (KiCad official)
- Symbol:
MURS260T3G-F - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
murs260t3g-f-etched.step/murs260t3g-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);murs260t3g-f.step/murs260t3g-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (4 pp, sha256
012737609446f4c5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MURS260T3G-F
**FUXINSEMI** · Fast Recovery / High Efficiency Diodes · SMB
MURS260T3G-F from FUXINSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 600 | V | | 1 |
| Maximum RMS voltage | VRMS | | | 420 | V | | 1 |
| Maximum continuous reverse voltage | VR | | | 600 | V | | 1 |
| Maximum average forward rectified current | IO | | | 2 | A | | 1 |
| Maximum reverse leakage current | IR | | | 5 | μA | at rated VR, TJ=25 °C | 1 |
| Maximum reverse leakage current | IR | | | 150 | μA | at rated VR, TJ=125 °C | 1 |
| Maximum reverse recovery time | trr | | | 50 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 1 |
| Typical junction capacitance | CJ | | 15 | | pF | 1 MHz, 4.0 VDC reverse | 1 |
| Storage temperature range | TSTG | -65 | | 175 | °C | | 1 |
| Operating junction temperature range | TJ | -55 | | 175 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MURS260T3G-F`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `murs260t3g-f-etched.step` / `murs260t3g-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `murs260t3g-f.step` / `murs260t3g-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FUXINSEMI datasheet](docs/murs260t3g-f-datasheet.pdf) (4 pp, sha256 `012737609446f4c5`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/murs260t3g-f-datasheet.pdf)