# MURS160HE3_A

**Vishay Intertech** · Fast Recovery / High Efficiency Diodes · DO-214AA(SMB)

MURS160HE3_A from Vishay Intertech, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AA(SMB) |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage (TJ = 25 °C) | VF |  |  | 1.25 | V | IF = 1.0 A, TJ = 25 °C | 2 |
| Maximum instantaneous forward voltage (TJ = 150 °C) | VF |  |  | 1.05 | V | IF = 1.0 A, TJ = 150 °C | 2 |
| Maximum instantaneous reverse current (TJ = 25 °C) | IR |  |  | 5 | μA | Rated VR, TJ = 25 °C | 2 |
| Maximum instantaneous reverse current (TJ = 150 °C) | IR |  |  | 150 | μA | Rated VR, TJ = 150 °C | 2 |
| Maximum reverse recovery time | trr |  |  | 75 | ns | IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM | 2 |
| Maximum forward recovery time | tfr |  |  | 50 | ns | IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V | 2 |
| Maximum repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 1 |
| Working peak reverse voltage | VRWM |  |  | 600 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 600 | V |  | 1 |
| Maximum average forward rectified current (TL = 150 °C) | IF(AV) |  |  | 1 | A | TL = 150 °C | 1 |
| Maximum average forward rectified current (TL = 125 °C) | IF(AV) |  |  | 2 | A | TL = 125 °C | 1 |
| Peak forward surge current | IFSM |  |  | 35 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 |
| Operating junction and storage temperature range | TJ, TSTG | -65 |  | 175 | °C |  | 1 |
| Typical thermal resistance, junction to lead | RJL |  | 13 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `MURS160HE3_A`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
- 3D model files: `murs160he3-a-etched.step` / `murs160he3-a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `murs160he3-a.step` / `murs160he3-a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588902395405611008) (5 pp, sha256 `4313563bd7f7f132`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/murs160he3-a-datasheet.pdf)