component
MURS120T3G-FS
Public Made by Adomby adom
FUXINSEMI Diodes - General Purpose, SMB. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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MURS120T3G-FS
FUXINSEMI · Diodes - General Purpose · SMB
MURS120T3G-FS from FUXINSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 200 | V | TA=25°C | 1 | ||
| Maximum RMS voltage | VRMS | 140 | V | TA=25°C | 1 | ||
| Maximum continuous reverse voltage | VR | 200 | V | TA=25°C | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 40 | A | 8.3ms single half sine-wave | 1 | ||
| Maximum instantaneous forward voltage | VF | 0.875 | V | IF=1.0A, TJ=25°C | 1 | ||
| Maximum instantaneous forward voltage | VF | 0.71 | V | IF=1.0A, TJ=125°C | 1 | ||
| Maximum reverse recovery time | trr | 25 | ns | IF=0.5A, IR=1A, Irr=0.25A | 1 | ||
| Typical junction capacitance | CJ | 15 | pF | 1 MHz, VR=4.0 VDC | 1 | ||
| Operating junction temperature range | TJ | -55 | 175 | °C | 1 | ||
| Storage temperature range | TSTG | -65 | 175 | °C | 1 |
CAD (KiCad official)
- Symbol:
MURS120T3G-FS - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
murs120t3g-fs-etched.step/murs120t3g-fs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);murs120t3g-fs.step/murs120t3g-fs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (4 pp, sha256
093c231148e20cd7, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MURS120T3G-FS
**FUXINSEMI** · Diodes - General Purpose · SMB
MURS120T3G-FS from FUXINSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 200 | V | TA=25°C | 1 |
| Maximum RMS voltage | VRMS | | | 140 | V | TA=25°C | 1 |
| Maximum continuous reverse voltage | VR | | | 200 | V | TA=25°C | 1 |
| Non-repetitive peak forward surge current | IFSM | | | 40 | A | 8.3ms single half sine-wave | 1 |
| Maximum instantaneous forward voltage | VF | | | 0.875 | V | IF=1.0A, TJ=25°C | 1 |
| Maximum instantaneous forward voltage | VF | | | 0.71 | V | IF=1.0A, TJ=125°C | 1 |
| Maximum reverse recovery time | trr | | | 25 | ns | IF=0.5A, IR=1A, Irr=0.25A | 1 |
| Typical junction capacitance | CJ | | 15 | | pF | 1 MHz, VR=4.0 VDC | 1 |
| Operating junction temperature range | TJ | -55 | | 175 | °C | | 1 |
| Storage temperature range | TSTG | -65 | | 175 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MURS120T3G-FS`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `murs120t3g-fs-etched.step` / `murs120t3g-fs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `murs120t3g-fs.step` / `murs120t3g-fs.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FUXINSEMI datasheet](docs/murs120t3g-fs-datasheet.pdf) (4 pp, sha256 `093c231148e20cd7`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/murs120t3g-fs-datasheet.pdf)