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Contents

README

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MUR560J

WeEn Semiconductors · Diodes - Fast Recovery Rectifiers · SMC

MUR560J from WeEn Semiconductors, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the ultrafast power diode; the datasheet gives no pin-specific electrical limits beyond the device ratings (VRRM 600 V, IF(AV) 5 A).
2 A passive Anode of the ultrafast power diode; the datasheet gives no pin-specific electrical limits beyond the device ratings (VRRM 600 V, IF(AV) 5 A).

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package SMC
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
repetitive peak reverse voltage VRRM 600 V 3
crest working reverse voltage VRWM 600 V 3
reverse voltage VR 600 V DC 3
average forward current IF(AV) 5 A δ = 0.5 ; square-wave pulse; Tlead ≤ 96 °C; Fig. 1; Fig. 2; Fig. 3 3
repetitive peak forward current IFRM 10 A δ = 0.5 ; tp = 25 μs; Tlead ≤ 96 °C; square-wave pulse 3
non-repetitive peak forward current IFSM 130 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 3
non-repetitive peak forward current IFSM 143 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 3
storage temperature Tstg -65 175 °C 3
junction temperature Tj 175 °C 3
thermal resistance from junction to case Rth(j-c) 12 K/W mounted on a minimum footprint printed-circuit board (FR4); Fig. 5 5
thermal resistance from junction to ambient free air Rth(j-a) 75 K/W mounted on a minimum footprint printed-circuit board (FR4) 5
forward voltage VF 1.1 1.35 V IF = 5 A; Tj = 25 °C; Fig. 6 6
forward voltage VF 0.9 1.15 V IF = 5 A; Tj = 150 °C; Fig. 6 6
reverse current IR 3 μA VR = 600 V; Tj = 25 °C 6
reverse current IR 250 μA VR = 600 V; Tj = 150 °C 6
reverse recovery time (step recovery) trr 65 ns IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C; Step recovery 6
non-repetitive avalanche energy Eas 10.8 mJ IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH 6

CAD (KiCad official)

  • Symbol: MUR560J
  • Footprint: Diode_SMD:D_SMC
  • 3D model: SMC (KiCad packages3D, STEP)
  • 3D model files: mur560j-etched.step / mur560j-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mur560j.step / mur560j.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (10 pp, sha256 3c135981a7debee0, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF