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MUR1100ERLG

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onsemi Fast Recovery / High Efficiency Diodes, DO-41. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MUR1100ERLG

onsemi · Fast Recovery / High Efficiency Diodes · DO-41

MUR1100ERLG from onsemi, in a DO-41. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode lead, marked by the polarity band on the package; the rectifier has a 1000 V reverse voltage rating (VRRM/VRWM/VR) and a 1.0 A average forward current rating.
2 ANODE passive Anode lead of the ultrafast rectifier, which is rated for 175°C maximum operating junction temperature.

Key specifications

Parameter Value
Manufacturer onsemi
Package DO-41
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum Instantaneous Forward Voltage (iF = 1.0 A, TJ = 150°C) vF 1.5 V iF = 1.0 A, TJ = 150°C 2
Maximum Instantaneous Forward Voltage (iF = 1.0 A, TJ = 25°C) vF 1.75 V iF = 1.0 A, TJ = 25°C 2
Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 100°C) iR 600 A Rated dc Voltage, TJ = 100°C 2
Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) iR 10 A Rated dc Voltage, TJ = 25°C 2
Maximum Reverse Recovery Time trr 100 ns IF = 1.0 A, di/dt = 50 Amp/s 2
Maximum Reverse Recovery Time trr 75 ns IF = 0.5 A, iR = 1.0 Amp, IREC = 0.25 A 2
Maximum Forward Recovery Time tfr 75 ns IF = 1.0 A, di/dt = 100 Amp/s, recovery to 1.0 V 2
Controlled Avalanche Energy WAVAL 10 mJ See Test Circuit in Figure 6 2
Peak Repetitive Reverse Voltage (MUR1100E) VRRM 1000 V 1
Working Peak Reverse Voltage (MUR1100E) VRWM 1000 V 1
DC Blocking Voltage (MUR1100E) VR 1000 V 1
Average Rectified Forward Current IF(AV) 1 A TA = 95°C; square wave, mounting method #3 per Note 3 1
Non-Repetitive Peak Surge Current IFSM 35 A Surge at rated load, halfwave, single phase, 60 Hz 1
Operating Junction Temperature and Storage Temperature Range TJ, Tstg -65 175 °C 1
Typical Peak Reverse Recovery Current IRM 1.7 A IF = 1.0 A, di/dt = 50 A/s 2
Maximum Thermal Resistance, Junction-to-Ambient RJA 50 °C/W Mounting Method #3 per Note 3 (value from Figure 3 legend) 3

CAD (KiCad official)

  • Symbol: MUR1100ERLG
  • Footprint: Diode_THT:D_DO-41_SOD81_P10.16mm_Horizontal
  • 3D model: DO-41 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 182ae50969249c80, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF