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MUN5331DW1T1G

Public Made by Adom

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onsemi Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MUN5331DW1T1G

onsemi · Digital Transistors · SOT-363

MUN5331DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of Q2 (NPN), connected to the 2.2 kΩ base-emitter resistor R2; VCEO 50 Vdc, IC 100 mAdc max.
2 B2 input Base (input) of Q2 (NPN) through series resistor R1 = 2.2 kΩ; input forward voltage 12 Vdc max, reverse 10 Vdc max.
3 C1 passive Collector of Q1 (PNP); VCEO 50 Vdc, IC 100 mAdc max.
4 E1 passive Emitter of Q1 (PNP), connected to the 2.2 kΩ base-emitter resistor R2; VCEO 50 Vdc, IC 100 mAdc max.
5 B1 input Base (input) of Q1 (PNP) through series resistor R1 = 2.2 kΩ; input forward voltage 12 Vdc max, reverse 10 Vdc max.
6 C2 passive Collector of Q2 (NPN); VCEO 50 Vdc, IC 100 mAdc max.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 3
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 3
Emitter-Base Cutoff Current IEBO 2.3 mAdc VEB = 6.0 V, IC = 0 3
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 3
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 3
DC Current Gain hFE 8 15 IC = 5.0 mA, VCE = 10 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 5.0 mA 3
Input Voltage (Off) - NPN Vi(off) 1.3 Vdc VCE = 5.0 V, IC = 1.0 mA (NPN) 3
Input Voltage (Off) - PNP Vi(off) 1.2 Vdc VCE = 5.0 V, IC = 1.0 mA (PNP) 3
Input Voltage (On) - NPN Vi(on) 1.8 Vdc VCE = 0.2 V, IC = 20 mA (NPN) 3
Input Voltage (On) - PNP Vi(on) 1.9 Vdc VCE = 0.2 V, IC = 20 mA (PNP) 3
Output Voltage (On) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k 3
Output Voltage (Off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k 3
Input Resistor R1 R1 1.5 2.2 2.9 k 3
Resistor Ratio R1/R2 R1/R2 0.8 1 1.2 3
Collector-Base Voltage VCBO 50 Vdc TA = 25°C, both polarities 1
Collector-Emitter Voltage VCEO 50 Vdc TA = 25°C, both polarities 1
Collector Current - Continuous IC 100 mAdc TA = 25°C, both polarities 1
Input Forward Voltage VIN(fwd) 12 Vdc TA = 25°C, both polarities 1
Input Reverse Voltage VIN(rev) 10 Vdc TA = 25°C, both polarities 1
Total Device Dissipation, one junction heated (Note 1) PD 187 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1) 2
Total Device Dissipation, one junction heated (Note 2) PD 256 mW TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 2
Derate above 25°C, one junction heated (Note 1) PD 1.5 mW/°C Above 25°C, FR-4 @ Minimum Pad (Note 1) 2
Derate above 25°C, one junction heated (Note 2) PD 2 mW/°C Above 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 2
Thermal Resistance, Junction to Ambient, one junction heated (Note 1) RJA 670 °C/W FR-4 @ Minimum Pad (Note 1) 2
Thermal Resistance, Junction to Ambient, one junction heated (Note 2) RJA 490 °C/W FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 2
Total Device Dissipation, both junctions heated (Note 1) PD 250 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1), both junctions heated (Note 3) 2
Total Device Dissipation, both junctions heated (Note 2) PD 385 mW TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2), both junctions heated (Note 3) 2
Derate above 25°C, both junctions heated (Note 1) PD 2 mW/°C Above 25°C, FR-4 @ Minimum Pad (Note 1), both junctions heated (Note 3) 2
Derate above 25°C, both junctions heated (Note 2) PD 3 mW/°C Above 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2), both junctions heated (Note 3) 2
Thermal Resistance, Junction to Ambient, both junctions heated (Note 1) RJA 493 °C/W FR-4 @ Minimum Pad (Note 1), both junctions heated (Note 3) 2
Thermal Resistance, Junction to Ambient, both junctions heated (Note 2) RJA 325 °C/W FR-4 @ 1.0 x 1.0 Inch Pad (Note 2), both junctions heated (Note 3) 2
Thermal Resistance, Junction to Lead (Note 1) RJL 188 °C/W FR-4 @ Minimum Pad (Note 1) 2
Thermal Resistance, Junction to Lead (Note 2) RJL 208 °C/W FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: MUN5331DW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mun5331dw1t1g-etched.step / mun5331dw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mun5331dw1t1g.step / mun5331dw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 d30a856350a244c5, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF