component
MUN5316DW1T1G
Public Made by Adomby adom
onsemi Digital Transistors, SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMUN5316DW1T1G
onsemi · Digital Transistors · SOT-363
MUN5316DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (NPN), with the base-emitter resistor R2 connected between the base and this pin per the pin connection diagram. |
| 2 | B2 | input | Base of Q2 (NPN) through series base resistor R1 = 4.7 kΩ (3.3 to 6.1 kΩ), with input forward voltage max 30 Vdc and reverse voltage max 6 Vdc. |
| 3 | C1 | passive | Collector of Q1 (PNP), rated for VCEO 50 Vdc, VCBO 50 Vdc and continuous IC 100 mAdc. |
| 4 | E1 | passive | Emitter of Q1 (PNP), with the base-emitter resistor R2 connected between the base and this pin per the pin connection diagram. |
| 5 | B1 | input | Base of Q1 (PNP) through series base resistor R1 = 4.7 kΩ (3.3 to 6.1 kΩ), with input forward voltage max 30 Vdc and reverse voltage max 5 Vdc. |
| 6 | C2 | passive | Collector of Q2 (NPN), rated for VCEO 50 Vdc, VCBO 50 Vdc and continuous IC 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Base Cutoff Current | ICBO | 100 | nAdc | VCB = 50 V, IE = 0 | 3 | ||
| Collector−Emitter Cutoff Current | ICEO | 500 | nAdc | VCE = 50 V, IB = 0 | 3 | ||
| Emitter−Base Cutoff Current | IEBO | 1.9 | mAdc | VEB = 6.0 V, IC = 0 | 3 | ||
| Collector−Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | IC = 10 A, IE = 0 | 3 | ||
| Collector−Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | IC = 2.0 mA, IB = 0 | 3 | ||
| DC Current Gain | hFE | 160 | 350 | IC = 5.0 mA, VCE = 10 V | 3 | ||
| Collector−Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | IC = 10 mA, IB = 0.3 mA | 3 | ||
| Output Voltage (on) | VOL | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | 3 | ||
| Output Voltage (off) | VOH | 4.9 | Vdc | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k | 3 | ||
| Input Resistor R1 | R1 | 3.3 | 4.7 | 6.1 | k | 3 | |
| Collector−Base Voltage | VCBO | 50 | Vdc | TA = 25°C, both polarities | 1 | ||
| Collector−Emitter Voltage | VCEO | 50 | Vdc | TA = 25°C, both polarities | 1 | ||
| Collector Current − Continuous | IC | 100 | mAdc | TA = 25°C, both polarities | 1 | ||
| Input Forward Voltage | VIN(fwd) | 30 | Vdc | TA = 25°C, both polarities | 1 | ||
| Input Reverse Voltage | VIN(rev) | 6 | Vdc | NPN | 1 | ||
| Input Reverse Voltage | VIN(rev) | 5 | Vdc | PNP | 1 | ||
| Total Device Dissipation, one junction heated | PD | 187 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 2 | ||
| Total Device Dissipation, one junction heated | PD | 256 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) | 2 | ||
| Derate above 25°C, one junction heated | PD | 1.5 | mW/°C | Note 1 (FR-4 @ Minimum Pad) | 2 | ||
| Derate above 25°C, one junction heated | PD | 2 | mW/°C | Note 2 (FR-4 @ 1.0 x 1.0 Inch Pad) | 2 | ||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 670 | °C/W | Note 1 (FR-4 @ Minimum Pad) | 2 | ||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 490 | °C/W | Note 2 (FR-4 @ 1.0 x 1.0 Inch Pad) | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 250 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1); both junctions heated | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 385 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2); both junctions heated | 2 | ||
| Derate above 25°C, both junctions heated | PD | 2 | mW/°C | Note 1 (FR-4 @ Minimum Pad); both junctions heated | 2 | ||
| Derate above 25°C, both junctions heated | PD | 3 | mW/°C | Note 2 (FR-4 @ 1.0 x 1.0 Inch Pad); both junctions heated | 2 | ||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 493 | °C/W | Note 1 (FR-4 @ Minimum Pad); both junctions heated | 2 | ||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 325 | °C/W | Note 2 (FR-4 @ 1.0 x 1.0 Inch Pad); both junctions heated | 2 | ||
| Thermal Resistance, Junction to Lead, both junctions heated | RJL | 188 | °C/W | Note 1 (FR-4 @ Minimum Pad); both junctions heated | 2 | ||
| Thermal Resistance, Junction to Lead, both junctions heated | RJL | 208 | °C/W | Note 2 (FR-4 @ 1.0 x 1.0 Inch Pad); both junctions heated | 2 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
MUN5316DW1T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mun5316dw1t1g-etched.step/mun5316dw1t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mun5316dw1t1g.step/mun5316dw1t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
bb20e98b44bf8c63, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).