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Ray Publish 0.1.0 23e2113 10d ago

MU6888B

miracle · MOSFETs · TO-252

MU6888B from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20V with threshold of 2.0V min to 4.0V max at ID = 250μA.
2 D passive Drain (also the tab); drain-source voltage is rated 68V with 88A continuous current at TC = 25°C and 320A pulsed.
3 S passive Source; carries the 88A continuous drain current at TC = 25°C and the body diode forward current (IS 88A).

Key specifications

Parameter Value
Manufacturer miracle
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 68 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 88 A TC = 25°C 1
Drain Current-Continuous ID 54 A TC = 100°C 1
Drain Current-Pulsed IDM 320 A Repetitive rating: pulse width limited by maximum junction temperature 1
Power Dissipation PD 109 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 342 mJ L = 0.5mH, VDD = 25V, IAS = 37A, RG = 25Ω, starting TJ = 25 ℃ 1
Operating Temperature Range TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 68 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 68V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 6 7.8 mΩ VGS = 10V, ID = 40A 2
Static Drain-Source On-Resistance RDS(on) 8.5 11 mΩ VGS = 6.0V, ID = 30A 2
Drain-Source Diode Forward Continuous Current IS 88 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current ISM 320 A 2
Drain-Source Diode Forward Voltage VSD 1.1 V VGS = 0V, IS = 30A 2
Gate Resistance RG 2 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 3601 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 318 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 299 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 20 ns VDD = 35V, VGS = 10V, ID = 40A, RGEN = 4.7Ω 2
Turn-On Rise Time tr 51 ns 2
Turn-Off Delay Time td(off) 50 ns 2
Turn-Off Fall Time tf 22 ns 2
Total Gate Charge Qg 75 nC VDS = 35V, VGS = 0 to 10V, ID = 40A 2
Gate-Source Charge Qgs 26 nC 2
Gate-Drain Charge Qgd 20 nC 2
Body Diode Reverse Recovery Time trr 23 ns IF = 20A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 16 nC IF = 20A, dIF/dt = 100A/μs 2
Thermal Resistance, Junction to Case RθJC 1.15 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 1

CAD (KiCad official)

  • Symbol: MU6888B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mu6888b-etched.step / mu6888b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mu6888b.step / mu6888b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (5 pp, sha256 653d552ae1c51c57, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF