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Contents

README

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MU6004D

MIRACLE POWER · MOSFETs · TO-252

MU6004D from MIRACLE POWER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with gate-source voltage limited to ±20V and threshold of 2.0V to 4.0V at ID = 250μA.
2 D passive Drain (also the tab); rated for 60V drain-source voltage and 80A continuous drain current at TC = 25°C.
3 S passive Source; carries up to 80A continuous current at TC = 25°C and is the body diode anode.

Key specifications

Parameter Value
Manufacturer MIRACLE POWER
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TJ = +25°C to +150°C (note a) 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 80 A TC = 25°C 1
Drain Current-Continuous ID 51 A TC = 100°C 1
Drain Current-Pulsed IDM 320 A Repetitive rating, pulse width limited by maximum junction temperature (note b) 1
Maximum Power Dissipation PD 40 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 272 mJ L = 0.5mH, VDD = 25V, IAS = 33A, RG = 25Ω, starting TJ = 25°C (note c) 1
Operating and Store Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 3.1 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 38 °C/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 5.4 6.6 mΩ VGS = 10V, ID = 30A; pulse width ≤300μs, duty cycle ≤0.5% (note d) 2
Drain-Source Diode Forward Continuous Current IS 80 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current ISM 320 A VG = VD = 0V, Force Current 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 30A 2
Gate Resistance RG 0.9 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 3708 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 265 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 232 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 45 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-On Rise Time tr 66 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-Off Delay Time td(off) 126 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-Off Fall Time tf 78 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Total Gate Charge Qg 80 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Gate-Source Charge Qgs 22 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Gate-Drain Charge Qgd 28 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Body Diode Reverse Recovery Time Trr 101 ns IF = 30A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 324 nC IF = 30A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MU6004D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mu6004d-etched.step / mu6004d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mu6004d.step / mu6004d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MIRACLE POWER datasheet (6 pp, sha256 0025d22ee8131a1d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF