component

MU6002D

Public Made by Adom

by adom

miracle MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MU6002D

miracle · MOSFETs · TO-252

MU6002D from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V with threshold VGS(th) of 1.0V min to 2.5V max at 250μA.
2 D passive Drain (also the exposed tab); 60V maximum drain-source voltage and 50A continuous drain current at TC = 25°C.
3 S passive Source; body diode forward continuous current of 50A and pulsed 198A.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 12 16 mΩ VGS = 10V, ID = 30A 2
Static Drain-Source On-Resistance RDS(on) 14 18 mΩ VGS = 4.5V, ID = 20A 2
Diode Forward Continuous Current IS 50 A VG = VD = 0V, Force Current 2
Maximum Pulsed Diode Current ISM 198 A VG = VD = 0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 30A 2
Drain-Source Voltage VDS 60 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V Tc = 25°C 1
Continuous Drain Current ID 50 A TC = 25°C 1
Continuous Drain Current ID 31 A TC = 100°C 1
Pulsed Drain Current IDM 198 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 40 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 100 mJ L = 0.5mH, VDD = 25V, IAS = 20A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 3.1 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 49 °C/W 1
Gate Resistance RG 2.4 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 2660 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 119 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 96 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 9 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-On Rise Time tr 31 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-Off Delay Time td(off) 44 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Turn-Off Fall Time tf 8 ns VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0Ω 2
Total Gate Charge Qg 50 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Gate-Source Charge Qgs 10 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Gate-Drain Charge Qgd 9 nC VDS = 30V, VGS = 0 to 10V, ID = 30A 2
Body Diode Reverse Recovery Time Trr 22 ns IF = 30A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 25.2 nC IF = 30A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MU6002D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mu6002d-etched.step / mu6002d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mu6002d.step / mu6002d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 8af0f8b69240090a, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF