component

MTB75N05HDT4-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmtb75n05hdt4-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers mtb75n05hdt4-vb: viewers · Ray 14d ago
mtb75n05hdt4-vb-etched.glb Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb-etched.step mtb75n05hdt4-vb: factory component page (tier=lcsc) · Ray 14d ago
mtb75n05hdt4-vb-hero.glb mtb75n05hdt4-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
mtb75n05hdt4-vb-hero.overlay.json Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb.glb Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb.kicad_mod Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb.kicad_sym Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb.lbr Publish 0.1.0 · Ray 14d ago
mtb75n05hdt4-vb.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

MTB75N05HDT4-VB

VBsemi Elec · MOSFETs · TO-263-2

MTB75N05HDT4-VB from VBsemi Elec, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V absolute maximum, with VGS(th) of 2.0 V min to 4.0 V max at ID = 250 μA.
2 D passive Drain, connected to the heat-sink tab; drain-source voltage rated 60 V, continuous drain current 150 A package limited at TC = 25 °C.
3 S passive Source; continuous source (body diode) current rated 120 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-263-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VGS = 10 V, VDS ≥ 5 V 2
Total Gate Charge Qg 96 145 nC VGS = 10 V, VDS = 30 V, ID = 75 A 2
Gate Resistance Rg 0.3 1 1.7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 16 24 ns VDD = 30 V, RL = 0.4 Ω, ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 14 21 ns VDD = 30 V, RL = 0.4 Ω, ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 34 51 ns VDD = 30 V, RL = 0.4 Ω, ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 9 14 ns VDD = 30 V, RL = 0.4 Ω, ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Source Current ISM 450 A 2
Forward Voltage VSD 0.9 1.5 V IF = 75 A, VGS = 0 2
Reverse Transfer Capacitance Crss 360 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Drain-Source On-State Resistance RDS(on) 4 mΩ VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 12 mΩ VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 15 mΩ VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Forward Transconductance gfs 94 S VDS = 15 V, ID = 30 A 2
Input Capacitance Ciss 7000 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 715 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 24 nC VGS = 10 V, VDS = 30 V, ID = 75 A 2
Gate-Drain Charge Qgd 27 nC VGS = 10 V, VDS = 30 V, ID = 75 A 2
Drain-Source Voltage VDS 60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 65 A TC = 125 °C, package limited 1
Continuous Source Current (Diode Conduction) IS 120 A package limited 1
Pulsed Drain Current IDM 350 A 1
Single Pulse Avalanche Current IAS 65 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 211 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 220 W TC = 25 °C 1
Maximum Power Dissipation PD 70 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB Mount, 1" square PCB (FR4 material) 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.65 °C/W 1

CAD (KiCad official)

  • Symbol: MTB75N05HDT4-VB
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2 (KiCad packages3D, STEP)
  • 3D model files: mtb75n05hdt4-vb-etched.step / mtb75n05hdt4-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mtb75n05hdt4-vb.step / mtb75n05hdt4-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 5bcc08255df66117, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF