component
MSQ100N03D
Public Made by Adomby adom
Bruckewell MOSFETs, SOP-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+12−9@@ -32,49 +32,49 @@ "number": "1", "name": "S1", "type": "passive",- "description": "Source of MOSFET 1. Return terminal for the first N-channel MOSFET channel; VGS rated \u00b120V, IS continuous up to 5A (limited by total power dissipation)."+ "description": "Source of MOSFET 1. Return terminal for the first N-channel MOSFET channel; VGS rated ±20V, IS continuous up to 5A (limited by total power dissipation)." }, { "number": "2", "name": "G1", "type": "input",- "description": "Gate of MOSFET 1. Control input for the first N-channel MOSFET; VGS(th)=1.0-2.5V (typ 1.7V), VGS absolute max \u00b120V."+ "description": "Gate of MOSFET 1. Control input for the first N-channel MOSFET; VGS(th)=1.0-2.5V (typ 1.7V), VGS absolute max ±20V." }, { "number": "3", "name": "S2", "type": "passive",- "description": "Source of MOSFET 2. Return terminal for the second N-channel MOSFET channel; VGS rated \u00b120V, IS continuous up to 5A (limited by total power dissipation)."+ "description": "Source of MOSFET 2. Return terminal for the second N-channel MOSFET channel; VGS rated ±20V, IS continuous up to 5A (limited by total power dissipation)." }, { "number": "4", "name": "G2", "type": "input",- "description": "Gate of MOSFET 2. Control input for the second N-channel MOSFET; VGS(th)=1.0-2.5V (typ 1.7V), VGS absolute max \u00b120V."+ "description": "Gate of MOSFET 2. Control input for the second N-channel MOSFET; VGS(th)=1.0-2.5V (typ 1.7V), VGS absolute max ±20V." }, { "number": "5", "name": "D2", "type": "passive",- "description": "Drain of MOSFET 2 (paired with pin 6 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25\u00b0C."+ "description": "Drain of MOSFET 2 (paired with pin 6 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25°C." }, { "number": "6", "name": "D2", "type": "passive",- "description": "Drain of MOSFET 2 (paired with pin 5 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25\u00b0C."+ "description": "Drain of MOSFET 2 (paired with pin 5 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25°C." }, { "number": "7", "name": "D1", "type": "passive",- "description": "Drain of MOSFET 1 (paired with pin 8 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25\u00b0C."+ "description": "Drain of MOSFET 1 (paired with pin 8 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25°C." }, { "number": "8", "name": "D1", "type": "passive",- "description": "Drain of MOSFET 1 (paired with pin 7 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25\u00b0C."+ "description": "Drain of MOSFET 1 (paired with pin 7 for reduced RDS(ON) and improved thermal). VDS rated 100V, ID continuous 2.3A @ TA=25°C." } ], "provenance": {@@ -139,5 +139,8 @@ "docs/msq100n03d-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }