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MSK50P03NF

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MSKSEMI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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MSK50P03NF

MSKSEMI · MOSFETs · DFN-8(5x6)

MSK50P03NF from MSKSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pin 1 is marked on the package, with the source pins grouped on this side); VDS = -30V and ID = -50A continuous at TC=25℃.
2 S passive Source of the P-channel MOSFET, tied with the other source pins; VDS = -30V and ID = -50A continuous at TC=25℃.
3 S passive Source of the P-channel MOSFET, tied with the other source pins; VDS = -30V and ID = -50A continuous at TC=25℃.
4 G input Gate of the P-channel MOSFET; VGS maximum is ±20V, RDS(ON) < 15mΩ at VGS=-10V and < 25mΩ at VGS=-4.5V, threshold -1V to -3V.
5 D passive Drain of the P-channel MOSFET, tied with the other drain pins; VDS = -30V and pulsed drain current -80A.
6 D passive Drain of the P-channel MOSFET, tied with the other drain pins; VDS = -30V and pulsed drain current -80A.
7 D passive Drain of the P-channel MOSFET, tied with the other drain pins; VDS = -30V and pulsed drain current -80A.
8 D passive Drain of the P-channel MOSFET, tied with the other drain pins; VDS = -30V and pulsed drain current -80A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V ID=-250μA 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 3
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA 3
Drain-Source On-State Resistance RDS(ON) 9 15 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance RDS(ON) 18 25 mΩ VGS=-4.5V, ID=-7A 3
Diode Forward Current (Note 2) IS -12 A 3
Diode Forward Voltage (Note 3) VSD -1.2 V VGS=0V, IS=-12A 3
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current-Continuous ID -50 A TC=25℃ 2
Drain Current-Continuous ID -24 A TC=100℃ 2
Drain Current-Pulsed (Note 1) IDM -80 A 2
Maximum Power Dissipation PD 3 W TC=25℃ 2
Maximum Power Dissipation PD 1.3 W TC=100℃ 2
Single pulse avalanche energy (Note 5) EAS 231 mJ 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 41.67 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 2

CAD (KiCad official)

  • Symbol: MSK50P03NF
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: msk50p03nf-etched.step / msk50p03nf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msk50p03nf.step / msk50p03nf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 81a74aab4d55f1c9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF