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MSESD5451X
Public Made by Adomby adom
MSKSEMI ESD Protection Devices, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMSESD5451X
MSKSEMI · ESD Protection Devices · DFN1006-2
MSESD5451X from MSKSEMI, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin 1 | passive | One terminal of the bidirectional per-line ESD/transient protection path, shown as Pin 1 in the DFN1006-2 pin configuration and circuit diagram, with 120W peak pulse power per line (tP = 8/20μs) and a working voltage VRWM of 5V stated for the line. |
| 2 | Pin 2 | passive | Other terminal of the bidirectional per-line ESD/transient protection path, shown as Pin 2 in the DFN1006-2 pin configuration and circuit diagram, with the same per-line ratings as Pin 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN1006-2 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Reverse Working Voltage | VRWM | 5 | V | 3 | |||
| Breakdown Voltage | VBR | 5.5 | 6.4 | 7.8 | V | It = 1mA | 3 |
| Reverse Leakage Current | IR | 1 | μA | VRWM = 5V T=25℃ | 3 | ||
| Clamping Voltage | VCL | 8.5 | V | IPP= 16A tp=100ns | 3 | ||
| Clamping Voltage | VC | 7.5 | V | IPP=3A | 3 | ||
| Clamping Voltage | VC | 8 | V | IPP=5A | 3 | ||
| Clamping Voltage | VC | 12 | V | IPP=10A | 3 | ||
| Junction Capacitance | Cj | 15 | pF | VR=0V f = 1MHz | 3 | ||
| Peak Pulse Power | Ppp | 120 | W | tp=8/20μs | 3 | ||
| Peak Pulse Current | IPP | 10 | A | tp=8/20μs | 3 | ||
| Operating Temperature | TJ | -55 | 150 | ℃ | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 3 |
CAD (KiCad official)
- Symbol:
MSESD5451X - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
msesd5451x-etched.step/msesd5451x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msesd5451x.step/msesd5451x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
2ea2d535f5539be0, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).