component
MSESD10EMC05
Public Made by Adomby adom
MSKSEMI ESD Protection Devices, DFN1006-2. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
MSESD10EMC05
MSKSEMI · ESD Protection Devices · DFN1006-2
MSESD10EMC05 from MSKSEMI, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD per IEC 61000-4-2 (Contact) | VESD | -30 | 30 | KV | 3 | ||
| ESD per IEC 61000-4-2 (Air) | VESD | -30 | 30 | KV | 3 | ||
| Peak Pulse Power | PPP | 60 | W | 8/20μs | 3 | ||
| Peak Pulse Current | IPP | 5 | A | 8/20μs | 3 | ||
| Operating Temperature | Tj | -55 | 125 | ℃ | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 3 | ||
| Reverse Stand-Off Voltage | VRWM | 5 | V | 3 | |||
| Reverse Breakdown voltage | VBR | 5.6 | V | IT=1mA | 3 | ||
| Reverse leakage current | IR | 1 | µA | VRWM=5V | 3 | ||
| Clamping Voltage | VC | 9.5 | V | IPP=1A, tP=8/20us | 3 | ||
| Clamping Voltage | VC | 12 | V | IPP=5A, tP=8/20us | 3 | ||
| Junction Capacitance | CJ | 15 | pF | VR=0V,f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
MSESD10EMC05 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
msesd10emc05-etched.step/msesd10emc05-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msesd10emc05.step/msesd10emc05.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
a34b1d01635a46eb, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MSESD10EMC05
**MSKSEMI** · ESD Protection Devices · DFN1006-2
MSESD10EMC05 from MSKSEMI, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD per IEC 61000-4-2 (Contact) | VESD | -30 | | 30 | KV | | 3 |
| ESD per IEC 61000-4-2 (Air) | VESD | -30 | | 30 | KV | | 3 |
| Peak Pulse Power | PPP | | | 60 | W | 8/20μs | 3 |
| Peak Pulse Current | IPP | | | 5 | A | 8/20μs | 3 |
| Operating Temperature | Tj | -55 | | 125 | ℃ | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 3 |
| Reverse Stand-Off Voltage | VRWM | | 5 | | V | | 3 |
| Reverse Breakdown voltage | VBR | | 5.6 | | V | IT=1mA | 3 |
| Reverse leakage current | IR | | 1 | | µA | VRWM=5V | 3 |
| Clamping Voltage | VC | | 9.5 | | V | IPP=1A, tP=8/20us | 3 |
| Clamping Voltage | VC | | 12 | | V | IPP=5A, tP=8/20us | 3 |
| Junction Capacitance | CJ | | 15 | | pF | VR=0V,f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `MSESD10EMC05`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `msesd10emc05-etched.step` / `msesd10emc05-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `msesd10emc05.step` / `msesd10emc05.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/msesd10emc05-datasheet.pdf) (6 pp, sha256 `a34b1d01635a46eb`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/msesd10emc05-datasheet.pdf)