component

MSE001C

Public Made by Adom

by adom

miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MSE001C

miracle · MOSFETs · TO-220

MSE001C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V with threshold VGS(th) of 2.0V min to 4.0V max at ID = 250μA.
2 D passive Drain (also connected to the mounting tab); drain-source voltage rated 150V with 84A continuous current at TC = 25°C.
3 S passive Source; body diode continuous forward current of 84A and pulsed 336A.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 150V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 3.2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 8.1 10.5 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 84 A VG = VD = 0V, Force Current 2
Maximum Pulsed Diode Current ISM 336 A VG = VD = 0V, Force Current 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 30A 2
Drain-Source Voltage VDS 150 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V Tc = 25°C 1
Continuous Drain Current ID 84 A TC = 25°C 1
Continuous Drain Current ID 59 A TC = 100°C 1
Pulsed Drain Current IDM 336 A Pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 178 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 576 mJ L = 2mH, VDD = 25V, IAS = 24A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.7 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 28 °C/W 1
Gate Resistance Rg 3.6 Ω f = 1MHz 2
Input Capacitance Ciss 3569 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 323 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 14 pF VDS = 75V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 16 ns VDD = 75V, VGS = 10V, ID = 20A, RGEN = 3Ω 2
Turn-On Rise Time tr 29 ns VDD = 75V, VGS = 10V, ID = 20A, RGEN = 3Ω 2
Turn-Off Delay Time td(off) 39 ns VDD = 75V, VGS = 10V, ID = 20A, RGEN = 3Ω 2
Turn-Off Fall Time tf 16 ns VDD = 75V, VGS = 10V, ID = 20A, RGEN = 3Ω 2
Total Gate Charge Qg 53 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 19 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 12 nC VDS = 75V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 85 ns IF = 15A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 253 nC IF = 15A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MSE001C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mse001c-etched.step / mse001c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mse001c.step / mse001c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 6af7077552ee2ea8, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF