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Ray Publish 0.1.0 d658da2 15d ago

MSD40P45

Bruckewell · MOSFETs · TO-252

MSD40P45 from Bruckewell, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold of -1.0 to -2.5 V and suited to -4.5 V gate drive.
2 D passive Drain (also the exposed tab); drain-source voltage -40 V and continuous drain current -45 A at TC=25°C.
3 S passive Source; continuous source current -45 A and pulsed source current -90 A through the body diode.

Key specifications

Parameter Value
Manufacturer Bruckewell
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250μA 2
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Drain-Source Leakage Current IDSS -1 μA VDS=-40V, VGS=0V, TJ=25°C 2
Drain-Source Leakage Current IDSS -10 μA VDS=-32V, VGS=0V, TJ=125°C 2
Static Drain-Source On-Resistance RDS(on) 12 15 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(on) 16 22 mΩ VGS=-4.5V, ID=-10A 2
Single Pulse Avalanche Energy EAS 31.2 mJ VDD=-25V, L=0.1mH, IAS=-25A 2
Diode Forward Voltage VSD -1.2 V IS=-20A, VGS=0V, TJ=25°C 2
Continuous Source Current IS -45 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -90 A VG=VD=0V, Force Current 2
Drain-Source Voltage VDS -40 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -45 A TC=25°C 2
Continuous Drain Current ID -28 A TC=100°C 2
Pulsed Drain Current IDM -180 A 2
Single Pulse Avalanche Current IAS -51 A L=0.1mH 2
Single Pulse Avalanche Energy EAS 130 mJ L=0.1mH 2
Power Dissipation PD 73.5 W TC=25°C 2
Power Dissipation PD 2 W TA=25°C 2
Operating Junction and Storage Temperature TJ/TSTG -55 150 °C 2
Maximum Junction-to-Ambient RθJA 62.5 °C/W 2
Maximum Junction-to-Case RθJC 1.7 °C/W 2
Forward Transconductance gfs 13 S VDS=-10V, ID=-10A 2
Total Gate Charge Qg 22.2 nC VDS=-32V, ID=-10A, VGS=-4.5V 3
Gate-Source Charge Qgs 8.2 nC VDS=-32V, ID=-10A, VGS=-4.5V 3
Gate-Drain Charge Qgd 8.8 nC VDS=-32V, ID=-10A, VGS=-4.5V 3
Turn-On Delay Time td(on) 23 ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω 3
Rise Time tr 10 ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω 3
Turn-Off Delay Time td(off) 135 ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω 3
Fall Time tf 46 ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω 3
Input Capacitance CISS 2757 pF VDS=-25V, VGS=0V, f=1.0MHz 3
Output Capacitance COSS 240 pF VDS=-25V, VGS=0V, f=1.0MHz 3
Reverse Transfer Capacitance CRSS 137 pF VDS=-25V, VGS=0V, f=1.0MHz 3

CAD (KiCad official)

  • Symbol: MSD40P45
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: msd40p45-etched.step / msd40p45-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msd40p45.step / msd40p45.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bruckewell datasheet (6 pp, sha256 a30b4f078706d747, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF