component
MSA003B
Public Made by Adomby adom
miracle MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| msa003b-etched.glb | 10d ago |
| msa003b-etched.step | 10d ago |
| msa003b-hero.glb | 10d ago |
| msa003b-hero.overlay.json | 10d ago |
| msa003b.glb | 10d ago |
| msa003b.kicad_mod | 10d ago |
| msa003b.kicad_sym | 10d ago |
| msa003b.lbr | 10d ago |
| msa003b.step | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
MSA003B
miracle · MOSFETs · TO-263
MSA003B from miracle, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS is rated ±20V and the gate threshold voltage VGS(th) is 2.0V min to 4.0V max at ID = 250μA. |
| 2 | D | passive | Drain (also the tab); VDS is rated 110V with 181A continuous drain current at TC = 25°C and 724A pulsed. |
| 3 | S | passive | Source; body diode forward continuous current is 181A max with VSD up to 1.2V at IS = 20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 110 | V | Note a: TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 181 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 128 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 724 | A | Note b: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 284 | W | TC = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 992 | mJ | Note c: L = 0.5mH, VDD = 25V, IAS = 63A, RG = 25Ω, starting TJ = 25 ℃ | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 110 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 110V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 3.1 | 3.9 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 181 | A | VG = VD = 0V, Force Current | 2 | ||
| Maximum Pulsed Current | ISM | 724 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 20A | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.44 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 35 | °C/W | 1 | |||
| Gate Resistance | RG | 2.1 | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 6720 | pF | VDS = 55V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 946 | pF | VDS = 55V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 28 | pF | VDS = 55V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 32 | ns | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2Ω | 2 | ||
| Turn-On Rise Time | tr | 45 | ns | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 78 | ns | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2Ω | 2 | ||
| Turn-Off Fall Time | tf | 48 | ns | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2Ω | 2 | ||
| Total Gate Charge | Qg | 101 | nC | VDS = 55V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Source Charge | Qgs | 34 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 24 | nC | 2 | |||
| Body Diode Reverse Recovery Time | Trr | 85 | ns | IF = 20A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 240 | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MSA003B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
msa003b-etched.step/msa003b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msa003b.step/msa003b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (6 pp, sha256
3f210f92ed920403, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).