component
MS9N150HGC0
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MASPOWER MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MS9N150HGC0
MASPOWER · MOSFETs · TO-247
MS9N150HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage ±20 V (transient ±30 V), threshold 2.5 V to 5.5 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage up to 1500 V, continuous drain current 9 A at TC = 25 °C (6 A at 100 °C), pulsed 36 A; also connected to the mounting tab. |
| 3 | S | passive | Source; source-drain diode current 9 A continuous and 40 A pulsed, forward voltage 1.2 V max at ISD = 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 1500 | V | VGS = 0 | 1 | ||
| Transient gate-source voltage | VGSM | -30 | 30 | V | 1 | ||
| Continuous gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current (continuous) | ID | 9 | A | TC = 25 °C | 1 | ||
| Drain current (continuous) | ID | 6 | A | TC = 100 °C | 1 | ||
| Drain current-pulsed | IDM | 36 | A | note 1: pulse width limited by max junction temperature | 1 | ||
| Total dissipation | PTOT | 657 | W | TC = 25 °C | 1 | ||
| Total dissipation | PTOT | 263 | W | TC = 100 °C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | 1 | ||||
| Avalanche current, repetitive or not-repetitive | IAR | 9 | A | pulse width limited by TJ max | 1 | ||
| Single pulse avalanche energy | EAS | 800 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 1500 | V | ID =250μA, VGS = 0 | 2 | ||
| Zero gate voltage drain current | IDSS | 500 | µA | VDS=VDSS, TC=125 °C | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate threshold voltage | VGS(th) | 2.5 | 5.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Static drain-source on resistance | RDS(on) | 2 | 2.8 | Ω | VGS = 10V, ID = 1A | 2 | |
| Forward on voltage | VSD | 0.68 | 1.2 | V | ISD= 1 A, VGS= 0 | 2 | |
| Thermal resistance junction-case | Rthj-case | 0.19 | ℃/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 50 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
MS9N150HGC0 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ms9n150hgc0-etched.step/ms9n150hgc0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms9n150hgc0.step/ms9n150hgc0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (6 pp, sha256
f22afd5a620d9cde, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MS9N150HGC0
**MASPOWER** · MOSFETs · TO-247
MS9N150HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage ±20 V (transient ±30 V), threshold 2.5 V to 5.5 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage up to 1500 V, continuous drain current 9 A at TC = 25 °C (6 A at 100 °C), pulsed 36 A; also connected to the mounting tab. |
| 3 | S | passive | Source; source-drain diode current 9 A continuous and 40 A pulsed, forward voltage 1.2 V max at ISD = 1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | | | 1500 | V | VGS = 0 | 1 |
| Transient gate-source voltage | VGSM | -30 | | 30 | V | | 1 |
| Continuous gate-source voltage | VGSS | -20 | | 20 | V | | 1 |
| Drain current (continuous) | ID | | | 9 | A | TC = 25 °C | 1 |
| Drain current (continuous) | ID | | | 6 | A | TC = 100 °C | 1 |
| Drain current-pulsed | IDM | | | 36 | A | note 1: pulse width limited by max junction temperature | 1 |
| Total dissipation | PTOT | | | 657 | W | TC = 25 °C | 1 |
| Total dissipation | PTOT | | | 263 | W | TC = 100 °C | 1 |
| Operating junction temperature | TJ | -55 | | 150 | °C | | 1 |
| Maximum lead temperature for soldering purpose | TL | | | 300 | | | 1 |
| Avalanche current, repetitive or not-repetitive | IAR | | | 9 | A | pulse width limited by TJ max | 1 |
| Single pulse avalanche energy | EAS | | | 800 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 1500 | | | V | ID =250μA, VGS = 0 | 2 |
| Zero gate voltage drain current | IDSS | | | 500 | µA | VDS=VDSS, TC=125 °C | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Gate threshold voltage | VGS(th) | 2.5 | | 5.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Static drain-source on resistance | RDS(on) | | 2 | 2.8 | Ω | VGS = 10V, ID = 1A | 2 |
| Forward on voltage | VSD | | 0.68 | 1.2 | V | ISD= 1 A, VGS= 0 | 2 |
| Thermal resistance junction-case | Rthj-case | | | 0.19 | ℃/W | | 3 |
| Thermal resistance junction-ambient | Rthj-amb | | | 50 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `MS9N150HGC0`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ms9n150hgc0-etched.step` / `ms9n150hgc0-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms9n150hgc0.step` / `ms9n150hgc0.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MASPOWER datasheet](docs/ms9n150hgc0-datasheet.pdf) (6 pp, sha256 `f22afd5a620d9cde`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ms9n150hgc0-datasheet.pdf)