component
MS9435
Public Made by Adomby adom
MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MS9435
MSKSEMI · MOSFETs · SOP-8
MS9435 from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the MOSFET; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 2 | Source | passive | Source terminal of the MOSFET, connected internally with pins 1 and 3; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 3 | Source | passive | Source terminal of the MOSFET, connected internally with pins 1 and 2; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 4 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-source voltage is VGS = ±20 V. |
| 5 | Drain | passive | Drain terminal of the MOSFET; the drain-source voltage rating is VDS = -30 V. |
| 6 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 7 and 8; the drain-source voltage rating is VDS = -30 V. |
| 7 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 6 and 8; the drain-source voltage rating is VDS = -30 V. |
| 8 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 6 and 7; the drain-source voltage rating is VDS = -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | -30 | V | ID=-250μA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V, VGS=0V | 3 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS ID=-250μA | 3 | |
| Static Drain-Source On-Resistance | RDS(On) | 50 | mΩ | VGS=-10V, ID=-5.3A (Note.1) | 3 | ||
| Static Drain-Source On-Resistance at TJ=125℃ | RDS(On) | 79 | mΩ | VGS=-10V, ID=-5.3A, TJ=125℃ (Note.1) | 3 | ||
| Static Drain-Source On-Resistance | RDS(On) | 80 | mΩ | VGS=-4.5V, ID=-4.2A (Note.1) | 3 | ||
| On state drain current | ID(ON) | -20 | A | VGS=-10V, VDS=-5V (Note.1) | 3 | ||
| Total Gate Charge | Qg | 14 | 23 | nC | VGS=-15V, VDS=-10V, ID=-5.3A | 3 | |
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 | |
| Turn-On Rise Time | tr | 10 | 18 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 | |
| Turn-Off Delay Time | td(off) | 19 | 34 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 | |
| Turn-Off Fall Time | tf | 11 | 20 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 | |
| Maximum Body-Diode Continuous Current | IS | -5.3 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-5.3A, VGS=0V (Note.1) | 3 | ||
| Drain-Source Voltage | VDS | -30 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 2 | |
| Continuous Drain Current | ID | -5.3 | A | Ta=25℃ | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | Ta=25℃ | 2 | ||
| Power Dissipation | PD | 2.5 | W | Note.1: 1in pad of 2 oz copper | 2 | ||
| Power Dissipation | PD | 1.2 | W | Note.2: .04in pad of 2 oz copper | 2 | ||
| Power Dissipation | PD | 1 | W | Note.3: minimum pad | 2 | ||
| Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Junction Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 50 | ℃/W | Note.1: 1in pad of 2 oz copper | 2 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 105 | ℃/W | Note.2: .04in pad of 2 oz copper | 2 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 125 | ℃/W | Note.3: minimum pad | 2 | ||
| Thermal Resistance Junction-to-Case | RthJC | 25 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
MS9435 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ms9435-etched.step/ms9435-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms9435.step/ms9435.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
2a6a85ef37f07089, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MS9435
**MSKSEMI** · MOSFETs · SOP-8
MS9435 from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the MOSFET; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 2 | Source | passive | Source terminal of the MOSFET, connected internally with pins 1 and 3; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 3 | Source | passive | Source terminal of the MOSFET, connected internally with pins 1 and 2; the datasheet rates the device at VDS = -30 V and continuous ID = -5.3 A at VGS = -10 V. |
| 4 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-source voltage is VGS = ±20 V. |
| 5 | Drain | passive | Drain terminal of the MOSFET; the drain-source voltage rating is VDS = -30 V. |
| 6 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 7 and 8; the drain-source voltage rating is VDS = -30 V. |
| 7 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 6 and 8; the drain-source voltage rating is VDS = -30 V. |
| 8 | Drain | passive | Drain terminal of the MOSFET, connected internally with pins 5, 6 and 7; the drain-source voltage rating is VDS = -30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | -30 | | | V | ID=-250μA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V, VGS=0V | 3 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS ID=-250μA | 3 |
| Static Drain-Source On-Resistance | RDS(On) | | | 50 | mΩ | VGS=-10V, ID=-5.3A (Note.1) | 3 |
| Static Drain-Source On-Resistance at TJ=125℃ | RDS(On) | | | 79 | mΩ | VGS=-10V, ID=-5.3A, TJ=125℃ (Note.1) | 3 |
| Static Drain-Source On-Resistance | RDS(On) | | | 80 | mΩ | VGS=-4.5V, ID=-4.2A (Note.1) | 3 |
| On state drain current | ID(ON) | -20 | | | A | VGS=-10V, VDS=-5V (Note.1) | 3 |
| Total Gate Charge | Qg | | 14 | 23 | nC | VGS=-15V, VDS=-10V, ID=-5.3A | 3 |
| Turn-On Delay Time | td(on) | | 7 | 14 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 |
| Turn-On Rise Time | tr | | 10 | 18 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 |
| Turn-Off Delay Time | td(off) | | 19 | 34 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 |
| Turn-Off Fall Time | tf | | 11 | 20 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 3 |
| Maximum Body-Diode Continuous Current | IS | | | -5.3 | A | | 3 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS=-5.3A, VGS=0V (Note.1) | 3 |
| Drain-Source Voltage | VDS | | | -30 | V | Ta=25℃ | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ | 2 |
| Continuous Drain Current | ID | | | -5.3 | A | Ta=25℃ | 2 |
| Pulsed Drain Current | IDM | | | -20 | A | Ta=25℃ | 2 |
| Power Dissipation | PD | | | 2.5 | W | Note.1: 1in pad of 2 oz copper | 2 |
| Power Dissipation | PD | | | 1.2 | W | Note.2: .04in pad of 2 oz copper | 2 |
| Power Dissipation | PD | | | 1 | W | Note.3: minimum pad | 2 |
| Junction Temperature | TJ | | | 150 | ℃ | | 2 |
| Junction Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 50 | ℃/W | Note.1: 1in pad of 2 oz copper | 2 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 105 | ℃/W | Note.2: .04in pad of 2 oz copper | 2 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 125 | ℃/W | Note.3: minimum pad | 2 |
| Thermal Resistance Junction-to-Case | RthJC | | | 25 | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `MS9435`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ms9435-etched.step` / `ms9435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms9435.step` / `ms9435.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835780437798912) (7 pp, sha256 `2a6a85ef37f07089`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ms9435-datasheet.pdf)