# MS8205A

**MSKSEMI** · MOSFETs · TSSOP-8

MS8205A from MSKSEMI, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous). |
| 2 | S1 | passive | Source of MOSFET 1. |
| 3 | S1 | passive | Source of MOSFET 1, internally the same node as pin 2. |
| 4 | G1 | input | Gate of MOSFET 1 (VGS max ±12 V, threshold 0.5 to 1.2 V). |
| 5 | G2 | input | Gate of MOSFET 2 (VGS max ±12 V, threshold 0.5 to 1.2 V). |
| 6 | S2 | passive | Source of MOSFET 2. |
| 7 | S2 | passive | Source of MOSFET 2, internally the same node as pin 6. |
| 8 | D2 | passive | Drain of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | TA=25℃ unless otherwise noted | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ unless otherwise noted; printed as ±12 V | 2 |
| Drain Current-Continuous | ID |  |  | 6 | A | TA=25℃ unless otherwise noted | 2 |
| Drain Current-Pulsed | IDM |  |  | 25 | A | Note 1 | 2 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TA=25℃ unless otherwise noted | 2 |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 |  | 150 | ℃ | TA=25℃ unless otherwise noted | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 83 | ℃/W | Note 2 (surface mounted on FR4 board, t ≤ 10 sec) | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | 21 |  | V | VGS=0V ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=19.5V,VGS=0V | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±10V,VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS ,ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 21 | 27 | mΩ | VGS=4.5V, ID=4.5A | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 27 | 37 | mΩ | VGS=2.5V, ID=3.5A | 3 |
| Turn-on Delay Time | td(on) |  | 10 | 20 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 3 |
| Turn-on Rise Time | tr |  | 11 | 25 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 35 | 70 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 3 |
| Turn-Off Fall Time | tf |  | 30 | 60 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 3 |
| Total Gate Charge | Qg |  | 10 | 15 | nC | VDS=10V,ID=6A, VGS=4.5V | 3 |
| Diode Forward Voltage | VSD |  | 0.75 | 1.2 | V | VGS=0V,IS=1.7A (Note 3) | 3 |
| Diode Forward Current | IS |  |  | 1.7 | A | Note 2 | 3 |

## CAD (KiCad official)

- Symbol: `MS8205A`
- Footprint: `Package_SO:TSSOP-8_3x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `ms8205a-etched.step` / `ms8205a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms8205a.step` / `ms8205a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603086948000931840) (8 pp, sha256 `7ab8b33b9f421506`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ms8205a-datasheet.pdf)