# MS8003C

**miracle** · MOSFETs · TO-220

MS8003C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20V and threshold of 2.0V to 4.0V at ID = 250μA. |
| 2 | D | passive | Drain; rated for VDS of 80V and continuous drain current of 313A at TC = 25°C (1250A pulsed). |
| 3 | S | passive | Source; body diode conducts from source to drain with continuous forward current up to 313A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 80 | V | TJ = +25 °C to +150 °C (note a) | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 313 | A | TC = 25°C | 1 |
| Drain Current-Continuous | ID |  |  | 198 | A | TC = 100°C | 1 |
| Drain Current-Pulsed | IDM |  |  | 1250 | A | Repetitive rating, pulse width limited by maximum junction temperature (note b) | 1 |
| Maximum Power Dissipation | PD |  |  | 312.5 | W | TC = 25°C | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 2592 | mJ | L = 1mH, VDD = 25V, IAS = 72A, RG = 25Ω, starting TJ = 25 °C (note c) | 1 |
| Operating and Store Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  | 0.4 |  | °C/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 35 |  | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 80V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 1.5 | 1.9 | mΩ | VGS = 10V, ID = 20A (note d: pulse width ≤ 300μs; duty cycle ≤ 2%) | 2 |
| Drain-Source Diode Forward Continuous Current | IS |  |  | 313 | A | VG = VD = 0V, Force Current | 2 |
| Maximum Pulsed Current | ISM |  |  | 1250 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  | 0.7 | 1.2 | V | VGS = 0V, IS = 20A | 2 |

## CAD (KiCad official)

- Symbol: `MS8003C`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ms8003c-etched.step` / `ms8003c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms8003c.step` / `ms8003c.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [miracle datasheet](docs/ms8003c-datasheet.pdf) (6 pp, sha256 `2f7a02233bee5248`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ms8003c-datasheet.pdf)