component
MS5N100FT
Public Made by Adomby adom
MASPOWER MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MS5N100FT
MASPOWER · MOSFETs · TO-220
MS5N100FT from MASPOWER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage ±20 V, transient ±30 V, threshold 2.0 to 5.0 V at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; drain-source voltage 1000 V, continuous drain current 5 A at TC=25 °C and 3 A at TC=100 °C, pulsed 18 A. |
| 3 | S | passive | Source; connected to the MOSFET body diode anode, source-drain current 5 A continuous and 18 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 1000 | V | VGS=0 | 1 | ||
| Transient gate-source voltage | VGSM | -30 | 30 | V | 1 | ||
| Continuous gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current repetitive or not-repetitive | IAR | 5 | A | pulse width limited by Tj Max | 1 | ||
| Single pulse avalanche energy | EAS | 583 | mJ | starting Tj=25℃ Id=IAR Vdd=50V | 1 | ||
| Drain current (continuous) at TC=25℃ | ID | 5 | A | TC=25℃ | 1 | ||
| Drain current (continuous) at TC=100℃ | ID | 3 | A | TC=100℃ | 1 | ||
| Drain current (pulsed) | IDM | 18 | A | 1 | |||
| Total dissipation | PD | 198 | W | TC=25℃ | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 1000 | V | ID=1mA VGS=0 | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=Max rating | 2 | ||
| Zero gate voltage drain current | IDSS | 50 | μA | VDS=Max rating, TC=125℃ | 2 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 5 | V | VDS=VGS ID=250μA | 2 | |
| Static drain-source on resistance | RDS(on) | 3.5 | 4.5 | Ω | VGS=10V ID=1A | 2 | |
| Source drain forward on voltage | VSD | 0.8 | 1.2 | V | ISD=5A,VGS=0V | 2 | |
| Source drain current | ISD | 5 | A | 2 | |||
| Source drain current (pulsed) | ISDM | 18 | A | 2 | |||
| Thermal resistance junction-case | Rthj-c | 0.63 | ℃/W | max | 3 | ||
| Thermal resistance junction-ambient | Rthc-a | 35 | ℃/W | max | 3 | ||
| Forward transconductance | gfs | 5.6 | S | VDS = 27 V, ID = 5A | 2 | ||
| Input capacitance | Ciss | 506 | pF | VDS=25V,f=1MHz,VGS=0 | 2 | ||
| Output capacitance | Coss | 59 | pF | VDS=25V,f=1MHz,VGS=0 | 2 | ||
| Reverse transfer capacitance | Crss | 3 | pF | VDS=25V,f=1MHz,VGS=0 | 2 | ||
| Total gate charge | Qg | 18.68 | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 | ||
| Gate-source charge | Qgs | 2.1 | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 | ||
| Gate-drain charge | Qgd | 7.3 | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 | ||
| Turn-on delay time | td(on) | 35.6 | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 | ||
| Rise time | tr | 22.9 | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 | ||
| Turn-off delay time | td(off) | 42.7 | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 | ||
| Fall time | tf | 13.6 | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 | ||
| Reverse recovery time | Trr | 1.02 | us | ISD=5A, di/dt=200A/μs, VR=100V, Tj=150℃ | 3 | ||
| Reverse recovery charge | Qrr | 3.68 | uC | ISD=5A, di/dt=200A/μs, VR=100V, Tj=150℃ | 3 |
CAD (KiCad official)
- Symbol:
MS5N100FT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ms5n100ft-etched.step/ms5n100ft-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms5n100ft.step/ms5n100ft.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (11 pp, sha256
dcb061b508d620cf, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MS5N100FT
**MASPOWER** · MOSFETs · TO-220
MS5N100FT from MASPOWER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage ±20 V, transient ±30 V, threshold 2.0 to 5.0 V at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; drain-source voltage 1000 V, continuous drain current 5 A at TC=25 °C and 3 A at TC=100 °C, pulsed 18 A. |
| 3 | S | passive | Source; connected to the MOSFET body diode anode, source-drain current 5 A continuous and 18 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 1000 | V | VGS=0 | 1 |
| Transient gate-source voltage | VGSM | -30 | | 30 | V | | 1 |
| Continuous gate-source voltage | VGSS | -20 | | 20 | V | | 1 |
| Avalanche current repetitive or not-repetitive | IAR | | | 5 | A | pulse width limited by Tj Max | 1 |
| Single pulse avalanche energy | EAS | | | 583 | mJ | starting Tj=25℃ Id=IAR Vdd=50V | 1 |
| Drain current (continuous) at TC=25℃ | ID | | | 5 | A | TC=25℃ | 1 |
| Drain current (continuous) at TC=100℃ | ID | | | 3 | A | TC=100℃ | 1 |
| Drain current (pulsed) | IDM | | | 18 | A | | 1 |
| Total dissipation | PD | | | 198 | W | TC=25℃ | 1 |
| Operating junction temperature | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | ℃ | | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 1000 | | | V | ID=1mA VGS=0 | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS=Max rating | 2 |
| Zero gate voltage drain current | IDSS | | | 50 | μA | VDS=Max rating, TC=125℃ | 2 |
| Gate body leakage current | IGSS | -100 | | 100 | nA | VGS=±20V | 2 |
| Gate threshold voltage | VGS(th) | 2 | | 5 | V | VDS=VGS ID=250μA | 2 |
| Static drain-source on resistance | RDS(on) | | 3.5 | 4.5 | Ω | VGS=10V ID=1A | 2 |
| Source drain forward on voltage | VSD | | 0.8 | 1.2 | V | ISD=5A,VGS=0V | 2 |
| Source drain current | ISD | | | 5 | A | | 2 |
| Source drain current (pulsed) | ISDM | | | 18 | A | | 2 |
| Thermal resistance junction-case | Rthj-c | | | 0.63 | ℃/W | max | 3 |
| Thermal resistance junction-ambient | Rthc-a | | | 35 | ℃/W | max | 3 |
| Forward transconductance | gfs | | 5.6 | | S | VDS = 27 V, ID = 5A | 2 |
| Input capacitance | Ciss | | 506 | | pF | VDS=25V,f=1MHz,VGS=0 | 2 |
| Output capacitance | Coss | | 59 | | pF | VDS=25V,f=1MHz,VGS=0 | 2 |
| Reverse transfer capacitance | Crss | | 3 | | pF | VDS=25V,f=1MHz,VGS=0 | 2 |
| Total gate charge | Qg | | 18.68 | | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 |
| Gate-source charge | Qgs | | 2.1 | | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 |
| Gate-drain charge | Qgd | | 7.3 | | nC | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 Ω | 2 |
| Turn-on delay time | td(on) | | 35.6 | | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 |
| Rise time | tr | | 22.9 | | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 |
| Turn-off delay time | td(off) | | 42.7 | | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 |
| Fall time | tf | | 13.6 | | ns | VDD = 800 V, ID = 2.5 A, RG = 25Ω, VGS = 10 V | 2 |
| Reverse recovery time | Trr | | 1.02 | | us | ISD=5A, di/dt=200A/μs, VR=100V, Tj=150℃ | 3 |
| Reverse recovery charge | Qrr | | 3.68 | | uC | ISD=5A, di/dt=200A/μs, VR=100V, Tj=150℃ | 3 |
## CAD (KiCad official)
- Symbol: `MS5N100FT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ms5n100ft-etched.step` / `ms5n100ft-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms5n100ft.step` / `ms5n100ft.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MASPOWER datasheet](docs/ms5n100ft-datasheet.pdf) (11 pp, sha256 `dcb061b508d620cf`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ms5n100ft-datasheet.pdf)