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Contents

README

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MS520

Hangzhou Ruimeng Tech · RFID ICs · VQFN-32-EP(5x5)

MS520 from Hangzhou Ruimeng Tech, in a VQFN-32-EP(5x5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 N.C. unconnected Not connected (datasheet pin type I, marked not connected).
2 PVDD power_in Pin supply; VDD(PVDD) is specified at 1.6 V to 3.6 V (1.8 V typical) and must be equal to or lower than VDDD.
3 DVDD power_in Digital supply; VDDD is specified at 2.5 V to 3.6 V (3.3 V typical) and must equal VDDA and VDD(TVDD).
4 DVSS power_in Digital ground; the exposed die pad under the package is optional and may be connected to this pin.
5 PVSS power_in Pin supply ground.
6 NRSTPD input Reset and power-down input: low level enables hard power-down (cuts internal current, stops the oscillator and disconnects input pins), and a rising edge enables reset.
7 TIN input Test signal input, also used as the active-antenna receive input when TIN/TOUT interface is used; must be tied to SVDD or PVSS when unused.
8 TOUT output Test signal output, used for test and for driving an active antenna circuit via the TOUT interface.
9 SVDD power_in Supply for the TIN and TOUT pins; specified at 1.6 V to 3.6 V and must be connected to DVDD, PVDD or another supply pin when unused.
10 TVSS power_in Ground of the TX1 transmitter output stage.
11 TX1 output Transmitter 1 output delivering the 13.56 MHz energy carrier modulated by the transmit envelope; drives the antenna through passive matching and filtering.
12 TVDD power_in Transmitter supply powering the TX1 and TX2 output stages; specified at 2.5 V to 3.6 V.
13 TX2 output Transmitter 2 output delivering the 13.56 MHz energy carrier modulated by the transmit envelope.
14 TVSS power_in Ground of the TX2 transmitter output stage.
15 AVDD power_in Analog supply; VDDA is specified at 2.5 V to 3.6 V (3.3 V typical) and must equal VDDD and VDD(TVDD).
16 VMID passive Internal reference voltage node (datasheet type P); no electrical limit is stated for it in the text.
17 RX input RF signal input; the pin voltage is clamped by internal diodes to AVSS and AVDD, with input voltage range -1 V to VDDA +1 V.
18 AVSS power_in Analog ground.
19 AUX1 output Auxiliary output for test signals; DAC outputs are current sources, so a 510 Ω pull-down resistor is recommended.
20 AUX2 output Auxiliary output for test signals; DAC outputs are current sources, so a 510 Ω pull-down resistor is recommended.
21 OSCIN input Inverting input of the crystal oscillator amplifier, also the input for an external clock (27.12 MHz, 40-60 % duty cycle).
22 OSCOUT output Inverting output of the crystal oscillator amplifier for a 27.12 MHz crystal.
23 IRQ output Interrupt request output indicating an interrupt event; can be configured as push-pull or open-drain.
24 NSS input SPI slave select input.
25 D1 bidirectional Test port D1 (I/O), usable only as an output when the test pin output driver is enabled; limited to D1-D4 when SPI is used.
26 D2 bidirectional Test port D2 (I/O).
27 D3 bidirectional Test port D3 (I/O).
28 D4 bidirectional Test port D4 (I/O).
29 SCK bidirectional Multiplexed pin: test port D5 (I/O) and SPI serial clock input SCK, which must be generated by the host.
30 MOSI bidirectional Multiplexed pin: test port D6 (I/O) and SPI master-out/slave-in MOSI (I/O).
31 MISO bidirectional Multiplexed pin: test port D7 (I/O) and SPI master-in/slave-out MISO (I/O).
32 N.C. unconnected Not connected (datasheet pin type I, marked not connected).
33 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Hangzhou Ruimeng Tech
Package VQFN-32-EP(5x5)
Category RF And Wireless
Pins 33

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Analog supply voltage (absolute maximum) VDDA -0.5 4 V 47
Digital supply voltage (absolute maximum) VDDD -0.5 4 V 47
PVDD supply voltage (absolute maximum) VDD(PVDD) -0.5 4 V 47
TVDD supply voltage (absolute maximum) VDD(TVDD) -0.5 4 V 47
SVDD supply voltage (absolute maximum) VDD(SVDD) -0.5 4 V 47
Junction temperature Tj 100 ℃ 47
ESD voltage HBM VESD 2000 V HBM;150Ω;100pF;JESD22-A144-B 47
ESD voltage MM VESD 200 V MM;0.75μH;200pF;JESD22-A144-A 47
Analog supply voltage (recommended) VDDA 2.5 3.3 3.6 V VDD(PVDD)≤VDDA=VDDD=VDD(TVDD); VSSA =VSSD =VSS(PVSS) =VSS(TVSS) =0V 48
Digital supply voltage (recommended) VDDD 2.5 3.3 3.6 V VDD(PVDD)≤VDDA=VDDD=VDD(TVDD); VSSA =VSSD =VSS(PVSS) =VSS(TVSS) =0V 48
TVDD supply voltage (recommended) VDD(TVDD) 2.5 3.3 3.6 V VDD(PVDD)≤VDDA=VDDD=VDD(TVDD); VSSA =VSSD =VSS(PVSS) =VSS(TVSS) =0V 48
PVDD supply voltage (recommended) VDD(PVDD) 1.6 1.8 3.6 V VDD(PVDD)≤VDDA=VDDD=VDD(TVDD); VSSA =VSSD =VSS(PVSS) =VSS(TVSS) =0V 48
SVDD supply voltage (recommended) VDD(SVDD) 1.6 3.6 V VSSA =VSSD =VSS(PVSS) =VSS(TVSS) =0V 48
Ambient temperature (QFN32) Tamb -25 85 ℃ QFN32 48
NRSTPD input leakage current ILI -1 1 μA 49
TIN input leakage current ILI -1 1 μA 49
RX input voltage Vi -1 V 49
OSCIN input leakage current ILI -1 1 μA 49
D1-D7 input leakage current ILI -1 1 μA 49
D1-D7 output current high IOH 4 mA VDD(PVDD)= 3V 49
D1-D7 output current low IOL 4 mA VDD(PVDD)= 3V 49
TOUT output current high IOH 4 mA VDD(PVDD)= 3V 50
TOUT output current low IOL 4 mA VDD(PVDD)= 3V 50
IRQ output current high IOH 4 mA VDD(PVDD)= 3V 50
IRQ output current low IOL 4 mA VDD(PVDD)= 3V 50
AUX1 and AUX2 output current high IOH 4 mA VDD(PVDD)= 3V 50
AUX1 and AUX2 output current low IOL 4 mA VDD(PVDD)= 3V 50
TX1 and TX2 output voltage low VOL 0.15 V VDD(TVDD)=3V; IDD(TVDD)=32mA; CWGsP[5:0]=0Fh 50
TX1 and TX2 output voltage low VOL 0.4 V VDD(TVDD)=3V; IDD(TVDD)=80mA; CWGsP[5:0]=0Fh 50
TX1 and TX2 output voltage low VOL 0.24 V VDD(TVDD)=2.5V; IDD(TVDD)=32mA; CWGsP[5:0]=0Fh 50
TX1 and TX2 output voltage low VOL 0.64 V VDD(TVDD)=2.5V; IDD(TVDD)=80mA; CWGsP[5:0]=0Fh 50
Power-down current, hard power-down Ipd 5 μA VDDA=VDDD=VDD(TVDD)=VDD(PVDD)=3V; hard power-down NRSTPD=LOW 50
Power-down current, soft power-down Ipd 10 μA VDDA=VDDD=VDD(TVDD)=VDD(PVDD)=3V; soft power-down, RF level detector off 51
PVDD supply current IDD(PVDD) 40 mA Pin PVDD 51
TVDD supply current IDD(TVDD) 60 100 mA Pin TVDD; continuous wave 51
SVDD supply current IDD(SVDD) 4 mA Pin SVDD 51
Clock duty cycle δclk 40 50 60 % 51
Clock jitter time tjit 10 ps RMS 51
Crystal equivalent series resistance ESR 100 Ω 51
Crystal power dissipation Pxtal 50 100 mW 51
SPI low-level pulse width SCK tWL 50 ns SCK 52
SPI high-level pulse width SCK tWH 50 ns SCK 52
SPI data input hold time after SCK high th(SCKH-D) 25 ns SCK to changing MOSI 52
SPI data input setup time to SCK high tsu(D-SCKH) 25 ns changing MOSI to SCK 52
SPI data output hold time after SCK low th(SCKL-Q) 25 ns SCK to changing MISO 52
SCK low to NSS high time t(SCKL-NSSH) 0 ns 52
NSS high time before communication tNHNL 50 ns 52

CAD (KiCad official)

  • Symbol: MS520
  • Footprint: Package_DFN_QFN:QFN-32-1EP_5x5mm_P0.5mm_EP3.3x3.3mm
  • 3D model: VQFN-32-EP(5x5) (KiCad packages3D, STEP)
  • 3D model files: ms520-etched.step / ms520-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms520.step / ms520.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Ruimeng Tech datasheet (62 pp, sha256 7870c75ac44eea56, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF