component
MS50N02
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ms50n02-etched.glb | 17d ago |
| ms50n02-etched.step | 17d ago |
| ms50n02-hero.glb | 17d ago |
| ms50n02-hero.overlay.json | 17d ago |
| ms50n02.glb | 17d ago |
| ms50n02.kicad_mod | 17d ago |
| ms50n02.kicad_sym | 17d ago |
| ms50n02.lbr | 17d ago |
| ms50n02.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MS50N02
MSKSEMI · MOSFETs · TO-252-2
MS50N02 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold 0.5 V min to 1.0 V max at ID=250μA. |
| 2 | D | passive | Drain (also the tab); VDS 20 V max, continuous drain current 60 A, pulsed 210 A. |
| 3 | S | passive | Source; body diode forward current IS up to 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current-Continuous | ID | 60 | A | 2 | |||
| Drain Current-Continuous | ID (100℃) | 42 | A | TC=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 210 | A | 2 | |||
| Maximum Power Dissipation | PD | 60 | W | 2 | |||
| Single pulse avalanche energy | EAS | 200 | mJ | Note 5: Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 2.1 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1 | V | VDS=VGS,ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 4.8 | 6 | mΩ | VGS=4.5V, ID=20 A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 6.2 | 9 | mΩ | VGS=2.5V, ID=15A | 3 | |
| Forward Transconductance | gFS | 15 | S | VDS= 10V,ID=20A | 3 | ||
| Diode Forward Current | IS | 60 | A | 3 |
CAD (KiCad official)
- Symbol:
MS50N02 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
ms50n02-etched.step/ms50n02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms50n02.step/ms50n02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (9 pp, sha256
f30d9f0dab6d9265, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).