component
MS18N100HGC0
Public Made by Adomby adom
MASPOWER MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMS18N100HGC0
MASPOWER · MOSFETs · TO-247
MS18N100HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage limit is ±20 V (±30 V transient) with threshold VGS(th) of 2 to 4 V at ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage is rated 1000 V with continuous drain current of 18 A at TC=25℃ (12 A at TC=100℃). |
| 3 | S | passive | Source; connects to the source of the N-channel MOSFET and the body diode anode, with a diode forward current up to 18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1000 | V | 1 | |||
| Transient Gate-Source Voltage | VGSM | -30 | 30 | V | 1 | ||
| Continuous Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current-continuous | ID | 18 | A | TC=25℃ | 1 | ||
| Drain Current-continuous | ID | 12 | A | TC=100℃ | 1 | ||
| Drain Current-pulse | IDM | 52 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 750 | mJ | note2 | 1 | ||
| Maximum Power Dissipation | PD | 589 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 235 | W | TC=100℃ | 1 | ||
| Peak Diode Recovery voltage slope | dv/dt | 4.1 | V/ns | note3 | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Voltage | BVDSS | 1000 | V | ID=250μA,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=VDSS,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | Tc=125℃ | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.55 | 0.75 | Ω | VGS=10V,ID=1A (note4) | 2 | |
| Maximum Continuous Drain-Source Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS=0V,IS=1A(note4) | 2 | |
| Diode Forward Current | IS | 18 | A | 2 | |||
| Thermal Resistance, junction to Case | Rth(j-C) | 0.212 | ℃/W | 3 | |||
| Thermal Resistance, junction to Ambient | Rth(j-A) | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
MS18N100HGC0 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ms18n100hgc0-etched.step/ms18n100hgc0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms18n100hgc0.step/ms18n100hgc0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (5 pp, sha256
21e196bfd20bbc88, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).