component
MS12N150HGC0
Public Made by Adomby adom
MASPOWER MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMS12N150HGC0
MASPOWER · MOSFETs · TO-247
MS12N150HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage is limited to ±20 V (±30 V transient), with a threshold VGS(th) of 2.0 to 5.5 V at ID=250 µA. |
| 2 | D | passive | Drain; rated for VDSS of 1500 V and 12 A continuous at TC=25℃ (22 A pulsed). |
| 3 | S | passive | Source; carries the 12 A continuous drain current at TC=25℃ and the body-diode forward current IS of 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1500 | V | 1 | |||
| Transient Gate-Source Voltage | VGSM | -30 | 30 | V | 1 | ||
| Continuous Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current-continuous | ID | 12 | A | TC=25℃ | 1 | ||
| Drain Current-continuous | ID | 8 | A | TC=100℃ | 1 | ||
| Drain Current-pulse | IDM | 22 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 607 | mJ | note2 | 1 | ||
| Maximum Power Dissipation | PD | 694 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 277 | W | TC=100℃ | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead Storage Temperature Range Purposes | TL | 300 | ℃ | 1 | |||
| Drain-Source Voltage | BVDSS | 1500 | V | ID=1mA,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=VDSS,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 5.5 | V | VDS=VGS,ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.3 | 1.8 | Ω | VGS=10V,ID=1A (note3) | 2 | |
| Continuous Drain-Source Diode Forward Current | VSD | 0.5 | 1.2 | V | VGS=0V,IS=12A (note3) | 2 | |
| Diode Forward Current | IS | 12 | A | TC=25℃ | 2 | ||
| Thermal Resistance, junction to Case | Rth(j-C) | 0.18 | ℃/W | 3 | |||
| Thermal Resistance, junction to ambient | Rth(j-A) | 36 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
MS12N150HGC0 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ms12n150hgc0-etched.step/ms12n150hgc0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms12n150hgc0.step/ms12n150hgc0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (6 pp, sha256
5a9fd4d532ef81ff, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).