component

MS10N40HGT0

Public Made by Adom

by adom

MASPOWER MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsms10n40hgt0factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ms10n40hgt0 / README.md
History Download
Ray Publish 0.1.0 5a12508 18d ago

MS10N40HGT0

MASPOWER · MOSFETs · TO-220

MS10N40HGT0 from MASPOWER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, with threshold VGS(th) of 2.0 to 4.0 V at ID=0.25 mA.
2 D passive Drain (also the tab); VDSS 400 V, continuous drain current 10 A and pulsed drain current 30 A.
3 S passive Source; connected to the body diode anode, with continuous diode forward current IS of 10 A.

Key specifications

Parameter Value
Manufacturer MASPOWER
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 400 V ID=0.25mA,VGS=0V 1
Zero Gate Voltage Drain Current IDSS 10 μA VDS=VDSS,VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±30V,VDS=0V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=0.25mA 2
Static Drain-Source On-Resistance RDS(ON) 0.43 0.54 Ω VGS=10V,ID=5A 2
Input capacitance Ciss 650 809 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Output capacitance Coss 70 95 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Reverse transfer capacitance Crss 25 33 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Turn-On delay time td(on) 20 50 ns VDS=200V,ID=10A, RG=25Ω 2
Turn-On rise time tr 80 170 ns VDS=200V,ID=10A, RG=25Ω 2
Turn-Off delay time td(Off) 125 260 ns VDS=200V,ID=10A, RG=25Ω 2
Turn-Off rise time tf 85 180 ns VDS=200V,ID=10A, RG=25Ω 2
Total Gate Charge Qg 19.7 25.6 nC VDS=320V,ID=10A, VGS=10V 2
Diode Forward Current IS 10 A TC=25℃ 2
Reverse recovery time Trr 217 nS IS=10A, dI/dT=100A/μS 2
Drain-Source Voltage VDSS 400 V Tc=25℃ 1
Gate-Source Voltage VGSS -30 30 V Tc=25℃ 1
Drain Current-continuous ID 10 A Tc=25℃ 1
Drain Current-pulse IDM 30 A Tc=25℃ 1
Single Pulsed Avalanche Energy EAS 450 mJ Tc=25℃ 1
Maximum Power Dissipation (TO-220/TO-252) PD 134 W Tc=25℃ 1
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, junction to Case Rth(j-C) 0.93 ℃/W TO-220/TO-252 3
Thermal Resistance, junction to Ambient Rth(j-A) 62.5 ℃/W 3
Forward Transconductance gfs 9.6 S VDS=40V,ID=5A 2
Gate-Source charge Qgs 7.38 nC VDS=320V,ID=10A, VGS=10V 2
Gate-Drain charge Qgd 4.66 nC VDS=320V,ID=10A, VGS=10V 2
Diode forward voltage VSD 1.5 V VGS=0V,IS=10A 2
Reverse recovery charge Qrr 2.45 μC IS=10A, dI/dT=100A/μS 2

CAD (KiCad official)

  • Symbol: MS10N40HGT0
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ms10n40hgt0-etched.step / ms10n40hgt0-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms10n40hgt0.step / ms10n40hgt0.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MASPOWER datasheet (8 pp, sha256 e92b6c7a4011ed65, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF