# MPT042N10S

**Minos** · MOSFETs · TO-263

MPT042N10S from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for RDS(on) of 3.5mΩ typ / 4.2mΩ max, with absolute maximum VGS of ±20V and threshold of 2.0 to 4.0V. |
| 2 | D | passive | Drain, also the exposed mounting tab; VDSS is 100V with continuous current of 120A (package limited) and pulsed current of 480A. |
| 3 | S | passive | Source; the body diode carries continuous source current up to 120A with VSD of 1.2V max at IS=50A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 100 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=100V, VGS=0V | 2 |
| Drain-Source Leakage Current @TC=125°C | IDSS |  |  | 100 | µA | VDS=80V, VGS=0V, @TC=125°C | 2 |
| Gate-Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS=+20V | 2 |
| Gate-Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS=-20V | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 3.5 | 4.2 | mΩ | VGS=10V, ID=50A; pulse width tp≤300µs, δ≤2% | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current | IS |  |  | 120 | A |  | 3 |
| Maximum Pulsed Current | ISM |  |  | 480 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=50A | 3 |
| Drain-Source Voltage | VDSS |  |  | 100 | V |  | 1 |
| Continuous Drain Current, Silicon Limited | ID |  |  | 170 | A | TC=25°C | 1 |
| Continuous Drain Current, Package Limited | ID |  |  | 120 | A | TC=25°C | 1 |
| Continuous Drain Current @TC=100°C, Silicon Limited | ID |  |  | 107.8 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 480 | A | Pulse width limited by maximum junction temperature (Note1) | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Avalanche Energy | EAS |  |  | 306 | mJ | L=0.5mH, Ias=35A, Start TJ=25℃ (Note2) | 1 |
| Power Dissipation | PD |  |  | 227.2 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 2 |
| Maximum Temperature for Soldering | TL |  |  | 260 | ℃ |  | 2 |
| Thermal resistance, Junction-Case | RθJC |  |  | 0.55 | ℃/W |  | 2 |
| Thermal resistance, Junction-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `MPT042N10S`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `mpt042n10s-etched.step` / `mpt042n10s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpt042n10s.step` / `mpt042n10s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](docs/mpt042n10s-datasheet.pdf) (11 pp, sha256 `15d3e38b112346f3`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mpt042n10s-datasheet.pdf)