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MPT035N08

Public Made by Adom

by adom

Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MPT035N08

Minos · MOSFETs · TO-220

MPT035N08 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a 2.0 to 4.0 V threshold (VGS(th)) at 250 µA.
2 D passive Drain, also connected to the metal tab; VDSS is 85 V and continuous current is 120 A package limited.
3 S passive Source; continuous source current is 120 A maximum and pulsed current is 480 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 85 V TC=25°C 1
Continuous Drain Current, Silicon Limited ID 185 A TC=25°C 1
Continuous Drain Current, Package Limited ID 120 A TC=25°C 1
Continuous Drain Current, Silicon Limited ID 117.2 A TC=100°C 1
Pulsed Drain Current IDM 480 A TC=25°C, pulse width limited by max junction temperature 1
Gate-Source Voltage VGS -20 20 V TC=25°C 1
Avalanche Energy EAS 240.2 mJ L=0.5mH, Ias=35A, Start TJ=25°C 1
Power Dissipation PD 208.3 W TC=25°C 2
Derating Factor above 25°C 1.67 W/℃ above 25°C 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 260 ℃ 2
Thermal Resistance, Junction-Case RθJC 0.5 ℃/W 2
Thermal Resistance, Junction-Ambient RθJA 62.5 ℃/W 2
Drain-Source Breakdown Voltage VDSS 85 95 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=100V, VGS=0V 2
Drain-Source Leakage Current IDSS 100 µA VDS=80V, VGS=0V, TC=125°C 2
Gate-Source Forward Leakage IGSS(F) 100 nA VGS=+20V 2
Gate-Source Reverse Leakage IGSS(R) -100 nA VGS=-20V 2
Drain-Source On-Resistance RDS(on) 3 4 mΩ VGS=10V, ID=50A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250µA 2
Continuous Source Current IS 120 A 3
Maximum Pulsed Current ISM 480 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=50A 3
Input Capacitance Ciss 6234 pF VDS=42.5V, VGS=0, f=1MHz 3
Output Capacitance Coss 1181 pF VDS=42.5V, VGS=0, f=1MHz 3
Reverse Transfer Capacitance Crss 97 pF VDS=42.5V, VGS=0, f=1MHz 3
Total Gate Charge Qg 124 nC VDD=42.5V, ID=50A, VGS=10V 3
Gate-Source Charge Qgs 31.2 nC VDD=42.5V, ID=50A, VGS=10V 3
Gate-Drain Charge Qgd 39.2 nC VDD=42.5V, ID=50A, VGS=10V 3
Turn-On Delay Time td(on) 41 ns VDD=42.5V, ID=10A, VGS=10V, RG=3Ω, Resistive Load 3
Rise Time tr 68 ns VDD=42.5V, ID=10A, VGS=10V, RG=3Ω, Resistive Load 3
Turn-Off Delay Time td(off) 76 ns VDD=42.5V, ID=10A, VGS=10V, RG=3Ω, Resistive Load 3
Fall Time tf 44 ns VDD=42.5V, ID=10A, VGS=10V, RG=3Ω, Resistive Load 3
Reverse Recovery Time Trr 80 ns Is=30A, di/dt=100A/us 3
Reverse Recovery Charge Qrr 112 uC Is=30A, di/dt=100A/us 3

CAD (KiCad official)

  • Symbol: MPT035N08
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mpt035n08-etched.step / mpt035n08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpt035n08.step / mpt035n08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (11 pp, sha256 a435b778c74d80a3, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF