component
MPT028N10
Public Made by Adomby adom
Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MPT028N10
Minos · MOSFETs · TO-220
MPT028N10 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold of 2.0 to 4.0 V (VDS=VGS, ID=250µA), and RDS(on) is specified at VGS=10V. |
| 2 | D | passive | Drain, also connected to the metal tab; VDSS is 100 V and continuous drain current is 180 A package limited (200 A silicon limited). |
| 3 | S | passive | Source; continuous source current IS is 180 A max and pulsed source current ISM is 720 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | TC=25°C | 1 | ||
| Continuous Drain Current, Silicon Limited | ID | 200 | A | TC=25°C | 1 | ||
| Continuous Drain Current, Package Limited | ID | 180 | A | TC=25°C | 1 | ||
| Continuous Drain Current, Silicon Limited | ID | 126.6 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 720 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Avalanche Energy | EAS | 784 | mJ | L=0.5mH, Ias=35A, Start TJ=25℃ | 2 | ||
| Power Dissipation | PD | 250 | W | TC=25°C | 2 | ||
| Derating Factor above 25°C | 2 | W/℃ | 2 | ||||
| Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 2 | |||
| Thermal resistance, Junction-Case | RθJC | 0.5 | ℃/W | 2 | |||
| Thermal resistance, Junction-Ambient | RθJA | 62.5 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | VDSS | 100 | 110 | V | VGS=0V, ID=250µA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | µA | VDS=80V, VGS=0V @TC=125°C | 2 | ||
| Gate-Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V | 2 | ||
| Gate-Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 2.7 | 3 | mΩ | VGS=10V, ID=50A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current | IS | 180 | A | 3 | |||
| Maximum Pulsed Current | ISM | 720 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=50A | 3 | ||
| Input Capacitance | Ciss | 9200 | pF | VDS=50V, VGS=0, f=1MHz | 2 | ||
| Output Capacitance | Coss | 1130 | pF | VDS=50V, VGS=0, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 110 | pF | VDS=50V, VGS=0, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 131 | nC | VDD=50V, ID=92.5A, VGS=10V | 3 | ||
| Gate-Source charge | Qgs | 50 | nC | VDD=50V, ID=92.5A, VGS=10V | 3 | ||
| Gate-Drain charge | Qgd | 24.5 | nC | VDD=50V, ID=92.5A, VGS=10V | 3 | ||
| Turn-On Delay Time | td(on) | 32 | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 | ||
| Rise Time | tr | 40 | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 | ||
| Turn-Off Delay Time | td(off) | 80 | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 | ||
| Fall Time | tf | 35 | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 | ||
| Reverse Recovery Time | Trr | 80 | ns | Is=92.5A, di/dt=100A/us | 3 | ||
| Reverse Recovery Charge | Qrr | 195 | uC | Is=92.5A, di/dt=100A/us | 3 |
CAD (KiCad official)
- Symbol:
MPT028N10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mpt028n10-etched.step/mpt028n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpt028n10.step/mpt028n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (10 pp, sha256
5bf0c4ec23b62b85, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MPT028N10
**Minos** · MOSFETs · TO-220
MPT028N10 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold of 2.0 to 4.0 V (VDS=VGS, ID=250µA), and RDS(on) is specified at VGS=10V. |
| 2 | D | passive | Drain, also connected to the metal tab; VDSS is 100 V and continuous drain current is 180 A package limited (200 A silicon limited). |
| 3 | S | passive | Source; continuous source current IS is 180 A max and pulsed source current ISM is 720 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | TC=25°C | 1 |
| Continuous Drain Current, Silicon Limited | ID | | | 200 | A | TC=25°C | 1 |
| Continuous Drain Current, Package Limited | ID | | | 180 | A | TC=25°C | 1 |
| Continuous Drain Current, Silicon Limited | ID | | | 126.6 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 720 | A | Pulse width limited by maximum junction temperature | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Avalanche Energy | EAS | | | 784 | mJ | L=0.5mH, Ias=35A, Start TJ=25℃ | 2 |
| Power Dissipation | PD | | | 250 | W | TC=25°C | 2 |
| Derating Factor above 25°C | | | | 2 | W/℃ | | 2 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
| Maximum Temperature for Soldering | TL | | | 260 | ℃ | | 2 |
| Thermal resistance, Junction-Case | RθJC | | | 0.5 | ℃/W | | 2 |
| Thermal resistance, Junction-Ambient | RθJA | | | 62.5 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | VDSS | 100 | 110 | | V | VGS=0V, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | µA | VDS=100V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | 100 | µA | VDS=80V, VGS=0V @TC=125°C | 2 |
| Gate-Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS=+20V | 2 |
| Gate-Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS=-20V | 2 |
| Drain-Source On-Resistance | RDS(on) | | 2.7 | 3 | mΩ | VGS=10V, ID=50A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current | IS | | | 180 | A | | 3 |
| Maximum Pulsed Current | ISM | | | 720 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=50A | 3 |
| Input Capacitance | Ciss | | 9200 | | pF | VDS=50V, VGS=0, f=1MHz | 2 |
| Output Capacitance | Coss | | 1130 | | pF | VDS=50V, VGS=0, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 110 | | pF | VDS=50V, VGS=0, f=1MHz | 2 |
| Total Gate Charge | Qg | | 131 | | nC | VDD=50V, ID=92.5A, VGS=10V | 3 |
| Gate-Source charge | Qgs | | 50 | | nC | VDD=50V, ID=92.5A, VGS=10V | 3 |
| Gate-Drain charge | Qgd | | 24.5 | | nC | VDD=50V, ID=92.5A, VGS=10V | 3 |
| Turn-On Delay Time | td(on) | | 32 | | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 |
| Rise Time | tr | | 40 | | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 |
| Turn-Off Delay Time | td(off) | | 80 | | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 |
| Fall Time | tf | | 35 | | ns | VDD=50V, VGS=10V, RG=1.6Ω, Resistive Load | 3 |
| Reverse Recovery Time | Trr | | 80 | | ns | Is=92.5A, di/dt=100A/us | 3 |
| Reverse Recovery Charge | Qrr | | 195 | | uC | Is=92.5A, di/dt=100A/us | 3 |
## CAD (KiCad official)
- Symbol: `MPT028N10`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mpt028n10-etched.step` / `mpt028n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpt028n10.step` / `mpt028n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](docs/mpt028n10-datasheet.pdf) (10 pp, sha256 `5bf0c4ec23b62b85`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mpt028n10-datasheet.pdf)