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MPSA06-TA
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Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MPSA06-TA
Changjing · Bipolar (BJT) · TO-92
MPSA06-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the NPN transistor; emitter-base voltage limited to 4 V maximum. |
| 2 | BASE | passive | Base of the NPN transistor; drives the collector current, which is rated 0.5 A continuous. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; collector-emitter voltage 80 V max and collector-base voltage 80 V max, 625 mW power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 80 | V | IC=100A, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC= 1mA , IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 4 | V | IE=100A, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | A | VCB=80V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | A | VEB=3V, IC=0 | 2 | ||
| DC current gain | hFE1 | 100 | 400 | VCE=1V, IC= 100mA | 2 | ||
| DC current gain | hFE2 | 100 | VCE=1V, IC= 10mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=100mA, IB=10mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC= 100mA, IB=10mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=2V, IC= 10mA, f = 100MHz | 2 | ||
| Collector-Base Voltage | VCBO | 80 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 4 | V | 1 | |||
| Collector Current -Continuous | IC | 0.5 | A | 1 | |||
| Collector Power Dissipation | PC | 625 | mW | 1 |
CAD (KiCad official)
- Symbol:
MPSA06-TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
mpsa06-ta-etched.step/mpsa06-ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpsa06-ta.step/mpsa06-ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
5004d334aadd4623, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MPSA06-TA
**Changjing** · Bipolar (BJT) · TO-92
MPSA06-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the NPN transistor; emitter-base voltage limited to 4 V maximum. |
| 2 | BASE | passive | Base of the NPN transistor; drives the collector current, which is rated 0.5 A continuous. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; collector-emitter voltage 80 V max and collector-base voltage 80 V max, 625 mW power dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 80 | | | V | IC=100A, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC= 1mA , IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 4 | | | V | IE=100A, IC=0 | 2 |
| Collector cut-off current | ICBO | | | 0.1 | A | VCB=80V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | A | VEB=3V, IC=0 | 2 |
| DC current gain | hFE1 | 100 | | 400 | | VCE=1V, IC= 100mA | 2 |
| DC current gain | hFE2 | 100 | | | | VCE=1V, IC= 10mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.25 | V | IC=100mA, IB=10mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC= 100mA, IB=10mA | 2 |
| Transition frequency | fT | 100 | | | MHz | VCE=2V, IC= 10mA, f = 100MHz | 2 |
| Collector-Base Voltage | VCBO | | | 80 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | 80 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 4 | V | | 1 |
| Collector Current -Continuous | IC | | | 0.5 | A | | 1 |
| Collector Power Dissipation | PC | | | 625 | mW | | 1 |
## CAD (KiCad official)
- Symbol: `MPSA06-TA`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `mpsa06-ta-etched.step` / `mpsa06-ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpsa06-ta.step` / `mpsa06-ta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/mpsa06-ta-datasheet.pdf) (5 pp, sha256 `5004d334aadd4623`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mpsa06-ta-datasheet.pdf)