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Contents

README

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MPS2222A

Changjing · Bipolar (BJT) · TO-92

MPS2222A from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the TO-92 package, which is the reference for the 6 V emitter-base rating (VEBO) and the emitter-base breakdown voltage V(BR)EBO of 6 V.
2 BASE passive Base terminal of the TO-92 package, which is driven during the datasheet tests with IB of 15 mA to 50 mA for saturation and switching characteristics.
3 COLLECTOR passive Collector terminal of the TO-92 package, rated for a continuous collector current of 600 mA with VCEO of 40 V and VCBO of 75 V maximum.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 40 V Ta=25℃ 1
Collector-Base Voltage VCBO 75 V Ta=25℃ 1
Emitter-Base Voltage VEBO 6 V Ta=25℃ 1
Collector Current -Continuous IC 600 mA Ta=25℃ 1
Collector Power Dissipation PC 625 mW Ta=25℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 75 V IC= 10uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 10uA, IC=0 1
Collector cut-off current ICBO 10 nA VCB= 60V, IE=0 1
Emitter cut-off current IEBO 100 nA VEB= 3 V, IC=0 1
DC current gain hFE(1) 100 300 VCE=10V,IC= 150mA 1
DC current gain hFE(2) 40 VCE=10V,IC= 0.1mA 1
DC current gain (pulse test) hFE(3) 42 VCE=10V, IC= 500mA 1
Collector-emitter saturation voltage (pulse test) VCE(sat)(1) 0.6 V IC= 500mA, IB=50mA 1
Collector-emitter saturation voltage (pulse test) VCE(sat)(2) 0.3 V IC= 150mA, IB=15mA 1
Base-emitter saturation voltage (pulse test) VBE(sat) 1.2 V IC= 500mA, IB= 50mA 1
Delay time td 10 nS 1
Rise time tr 25 nS VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA 1
Storage time tS 225 nS 1
Fall time tf 60 nS VCC=30V,Ic=150mA,IB1=IB2=15mA 1
Transition frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 1

CAD (KiCad official)

  • Symbol: MPS2222A
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: mps2222a-etched.step / mps2222a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mps2222a.step / mps2222a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (2 pp, sha256 a1a714f03099e74c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF