# MPQ8112GJ-AEC1-Z

**Monolithic Power Systems** · Current-Sensing Amplifiers · TSOT-23-6L

MPQ8112GJ-AEC1-Z from Monolithic Power Systems, in a TSOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | output | Output pin: OUT to GND is limited to 0V to 20V for the MPQ8112 (which can be left floating) and to 0V to VCC - 0.7V for the MPQ8112A. |
| 2 | RG2 | input | Negative gain resistor connection, kept below 4kΩ for high current-sense accuracy with 1kΩ recommended, and RG1/RG2 to GND rated 0V to VCC. |
| 3 | RG1 | input | Positive gain resistor connection, kept below 4kΩ for high current-sense accuracy with 1kΩ recommended, and RG1 to GND rated 0V to VCC. |
| 4 | VCC | power_in | Power input with a 2.7V to 60V operating supply range, requiring a 0.1µF to 1µF low-ESR ceramic bypass capacitor placed as close as possible between VCC and GND. |
| 5 | GND | power_in | Ground reference for the device, with the VCC bypass capacitor and V5 bypass capacitor returned to this pin. |
| 6 | V5 | power_in | Supply for the internal trim and control block: pull above the 2V upper threshold to enable the part and below the 1.9V lower threshold to disable it, with a source able to supply above 1mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | TSOT-23-6L |
| Category | Operational Amplifier/Comparator |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | 2.7 |  | 60 | V |  | 5 |
| Common mode input voltage | VCM | 0 |  |  | V |  | 5 |
| V5 supply voltage | V5 | 2.7 |  | 5.5 | V |  | 5 |
| Supply current | ICC + IV5 |  | 300 | 360 | µA | VSENSE = 0, VCC = 60V, V5 = 5V | 5 |
| Common mode input rejection | CMR | 65 | 90 |  | dB | VSENSE = 100mV, VCC = 60V, VCM1 = 60V, VCM2 = 22V | 5 |
| Full-scale sense voltage | VSENSE |  | 200 |  | mV | VSENSE = VRG1 - VRG2 | 5 |
| Input offset voltage | VOS |  | 0.3 | 1 | mV | VCM = 12V, VSENSE1 = 100mV, VSENSE2 = 20mV | 5 |
| Input bias current | IRG1, IRG2 |  | 0.25 | 1 | µA | VCM = 12V | 5 |
| Current-sense gain | GM | 4.95 | 5 | 5.05 | A/A | TJ = 25°C | 5 |
| Current-sense gain | GM | 4.9 | 5 | 5.1 | A/A | TJ = -40°C to +125°C | 5 |
| Output voltage gain (MPQ8112) | AV | 49.5 | 50 | 50.5 | V/V | MPQ8112, VSENSE = 100mV, VCM = 12V, TJ = 25°C | 5 |
| Output voltage gain (MPQ8112) | AV | 49 | 50 | 51 | V/V | MPQ8112, VSENSE = 100mV, VCM = 12V, TJ = -40°C to +125°C | 5 |
| Bandwidth | BW |  | 700 |  | kHz | COUT = 5pF | 5 |
| Power supply rejection ratio | PSRR | 70 | 80 |  | dB | VCC1 = 60V, VCC2 = 2.7V, VSENSE = 24mV | 5 |
| V5 upper threshold voltage | VTH_UPPER | 1.3 | 2 | 2.5 | V |  | 5 |
| V5 lower threshold voltage | VTH_LOWER | 1.2 | 1.9 | 2.4 | V |  | 5 |
| V5 shutdown supply current | ICC(SHDN) |  | 0.2 | 2 | µA | V5 = 1V | 5 |
| Output response time (rising input step) |  |  | 500 |  | ns | RG1 = RG2 = 1kΩ, ROUT = 10kΩ, VSENSE = 5mV to 100mV, VOUT from 10% to 90% | 5 |
| Output response time (falling input step) |  |  | 500 |  | ns | RG1 = RG2 = 1kΩ, ROUT = 10kΩ, VSENSE = 100mV to 5mV, VOUT from 10% to 90% | 5 |
| VCC to GND | VCC | -0.3 |  | 62 | V |  | 4 |
| VCC to RG1, RG2 |  | -0.3 |  | 62 | V |  | 4 |
| RG1, RG2 to GND |  | -0.3 |  |  | V |  | 4 |
| OUT to GND (MPQ8112) |  | -0.3 |  | 22 | V | MPQ8112 | 4 |
| Differential input voltage | VRG1 - VRG2 | -400 |  | 400 | mV |  | 4 |
| V5 to GND | V5 | -0.3 |  | 6 | V |  | 4 |
| Max junction temperature |  |  |  | 150 | °C |  | 4 |
| Storage temperature |  | -65 |  | 150 | °C |  | 4 |
| Continuous power dissipation TSOT23-6L |  |  |  | 0.57 | W | TA = 25°C | 4 |
| ESD human body model |  | -2 |  | 2 | kV | Human body model (HBM) | 4 |
| ESD charged device model |  | -750 |  | 750 | V | Charged device model (CDM) | 4 |
| Supply voltage VCC to GND | VCC | 2.7 |  | 60 | V |  | 4 |
| RG1, RG2 to GND |  | 0 |  |  | V |  | 4 |
| VCC to RG1, RG2 |  | 0 |  | 60 | V |  | 4 |
| OUT to GND (MPQ8112) |  | 0 |  | 20 | V | MPQ8112 | 4 |
| Operating junction temperature | TJ | -40 |  | 125 | °C |  | 4 |
| Thermal resistance junction-to-ambient TSOT23-6L | θJA |  | 220 |  | °C/W | JESD51-7 JEDEC board, for comparison only (note 5) | 4 |
| Thermal resistance junction-to-case TSOT23-6L | θJC |  | 110 |  | °C/W | JESD51-7 JEDEC board, for comparison only (note 5) | 4 |

## CAD (KiCad official)

- Symbol: `MPQ8112GJ-AEC1-Z`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `mpq8112gj-aec1-z-etched.step` / `mpq8112gj-aec1-z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpq8112gj-aec1-z.step` / `mpq8112gj-aec1-z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Monolithic Power Systems datasheet](docs/mpq8112gj-aec1-z-datasheet.pdf) (17 pp, sha256 `d8e68fb09f49cba4`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mpq8112gj-aec1-z-datasheet.pdf)