component
MPQ4559DN-LF-Z
Public Made by Adomby adom
Monolithic Power Systems DC-DC Converters, SOIC-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MPQ4559DN-LF-Z
Monolithic Power Systems · DC-DC Converters · SOIC-8-EP
MPQ4559DN-LF-Z from Monolithic Power Systems, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SW | output | Switch node output from the high-side switch; a low VF Schottky rectifier to ground is required and must be placed close to the SW pin to reduce switching spikes. |
| 2 | EN | input | Enable input; pull below the specified threshold to shut down the chip, pull above the threshold or leave floating to enable it. |
| 3 | COMP | passive | Compensation pin, the output of the GM error amplifier, where control loop frequency compensation is applied. |
| 4 | FB | input | Feedback input to the error amplifier; sets the regulator voltage by comparing an external resistive divider tap to the internal 0.8V reference. |
| 5 | GND | power_in | Ground, also the exposed pad; connect close to the output capacitor avoiding high-current switch paths, and connect the exposed pad to the GND plane for optimal thermal performance. |
| 6 | FREQ | passive | Switching frequency program input; connect a resistor from this pin to ground to set the switching frequency. |
| 7 | VIN | power_in | Input supply (3.8V to 55V recommended) powering all internal control circuitry, both BS regulators and the high-side switch; place a decoupling capacitor to ground close to this pin. |
| 8 | BST | passive | Bootstrap positive supply for the internal floating high-side MOSFET driver; connect a bypass capacitor between this pin and SW. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | SOIC-8-EP |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Feedback Voltage | VFB | 0.78 | 0.8 | 0.82 | V | 4.5V < VIN < 55V, TJ = 25C | 3 |
| Feedback Voltage | VFB | 0.772 | 0.829 | V | 4.5V < VIN < 55V, -40C ≤ TJ ≤ 85C | 3 | |
| Feedback Voltage | VFB | 0.766 | 0.829 | V | 4.5V < VIN < 55V, -40C ≤ TJ ≤ 125C | 3 | |
| Feedback Leakage Current | IFB | 0.1 | 1 | μA | 3 | ||
| Upper Switch On Resistance | RDS(ON) | 175 | 250 | 330 | mΩ | VBST, VSW = 5V, TJ = 25C | 3 |
| Upper Switch On Resistance (full temp) | RDS(ON) | 160 | 400 | mΩ | VBST, VSW = 5V | 3 | |
| Upper Switch Leakage | ISW | 1 | μA | VEN = 0V, VSW = 0V | 3 | ||
| Current Limit | ILIM | 1.9 | 2.3 | 4.5 | A | TJ = 25C, Duty Cycle ≤ 60% | 3 |
| Current Limit (full temp) | ILIM | 1.8 | 4.7 | A | Duty Cycle ≤ 60% | 3 | |
| VIN UVLO Threshold | 2.7 | 3 | 3.3 | V | TJ = 25C | 3 | |
| VIN UVLO Threshold (full temp) | 2.4 | 3 | 3.6 | V | 3 | ||
| Soft-Start Time | 0.19 | 0.5 | ms | 0V < VFB < 0.8V | 3 | ||
| Oscillator Frequency | fSW | 0.8 | 1 | 1.2 | MHz | RFREQ = 95kΩ, TJ = 25C | 3 |
| Oscillator Frequency (full temp) | fSW | 0.7 | 1.3 | MHz | RFREQ = 95kΩ | 3 | |
| Shutdown Supply Current | IS | 12 | 20 | µA | VEN < 0.3V | 3 | |
| Quiescent Supply Current | IQ | 140 | 200 | µA | No load, VFB = 0.9V (no switching) | 3 | |
| EN Rising Threshold | 1.4 | 1.55 | 1.7 | V | TJ = 25C | 3 | |
| EN Rising Threshold (full temp) | 1.3 | 1.8 | V | 3 | |||
| COMP to Current Sense Transconductance | GCS | 5.7 | A/V | 3 | |||
| Error Amp Voltage Gain | 400 | V/V | 3 | ||||
| Error Amp Transconductance | 120 | µA/V | ICOMP = ±3µA | 3 | |||
| Error Amp Min Source current | 10 | µA | VFB = 0.7V | 3 | |||
| Error Amp Min Sink current | -10 | µA | VFB = 0.9V | 3 | |||
| VIN UVLO Hysteresis | 0.35 | V | 3 | ||||
| Thermal Shutdown | 150 | C | Hysteresis = 20C | 3 | |||
| Minimum Off Time | TOFF | 100 | ns | 3 | |||
| Minimum On Time | TON | 100 | ns | 3 | |||
| EN Threshold Hysteresis | 320 | mV | 3 | ||||
| Supply Voltage | VIN | -0.3 | 60 | V | 2 | ||
| BST to SW | -0.3 | 5 | V | 2 | |||
| All Other Pins | -0.3 | 5 | V | 2 | |||
| Continuous Power Dissipation SOIC8E | 2.5 | W | TA = +25°C | 2 | |||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | -65 | 150 | °C | 2 | |||
| Supply Voltage VIN | VIN | 3.8 | 55 | V | 2 | ||
| Output Voltage VOUT | VOUT | 0.8 | 52 | V | 2 | ||
| Operating Junction Temperature | TJ | -40 | 125 | °C | 2 | ||
| Thermal Resistance Junction-Ambient SOIC8 (Exposed Pad) | θJA | 50 | °C/W | Measured on JESD51-7 4-layer board | 2 | ||
| Thermal Resistance Junction-Case SOIC8 (Exposed Pad) | θJC | 10 | °C/W | Measured on JESD51-7 4-layer board | 2 |
CAD (KiCad official)
- Symbol:
MPQ4559DN-LF-Z - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files:
mpq4559dn-lf-z-etched.step/mpq4559dn-lf-z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpq4559dn-lf-z.step/mpq4559dn-lf-z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Monolithic Power Systems datasheet (19 pp, sha256
022a6df274a2c6c7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MPQ4559DN-LF-Z
**Monolithic Power Systems** · DC-DC Converters · SOIC-8-EP
MPQ4559DN-LF-Z from Monolithic Power Systems, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SW | output | Switch node output from the high-side switch; a low VF Schottky rectifier to ground is required and must be placed close to the SW pin to reduce switching spikes. |
| 2 | EN | input | Enable input; pull below the specified threshold to shut down the chip, pull above the threshold or leave floating to enable it. |
| 3 | COMP | passive | Compensation pin, the output of the GM error amplifier, where control loop frequency compensation is applied. |
| 4 | FB | input | Feedback input to the error amplifier; sets the regulator voltage by comparing an external resistive divider tap to the internal 0.8V reference. |
| 5 | GND | power_in | Ground, also the exposed pad; connect close to the output capacitor avoiding high-current switch paths, and connect the exposed pad to the GND plane for optimal thermal performance. |
| 6 | FREQ | passive | Switching frequency program input; connect a resistor from this pin to ground to set the switching frequency. |
| 7 | VIN | power_in | Input supply (3.8V to 55V recommended) powering all internal control circuitry, both BS regulators and the high-side switch; place a decoupling capacitor to ground close to this pin. |
| 8 | BST | passive | Bootstrap positive supply for the internal floating high-side MOSFET driver; connect a bypass capacitor between this pin and SW. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | SOIC-8-EP |
| Category | Power Management (PMIC) |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Feedback Voltage | VFB | 0.78 | 0.8 | 0.82 | V | 4.5V < VIN < 55V, TJ = 25C | 3 |
| Feedback Voltage | VFB | 0.772 | | 0.829 | V | 4.5V < VIN < 55V, -40C ≤ TJ ≤ 85C | 3 |
| Feedback Voltage | VFB | 0.766 | | 0.829 | V | 4.5V < VIN < 55V, -40C ≤ TJ ≤ 125C | 3 |
| Feedback Leakage Current | IFB | | 0.1 | 1 | μA | | 3 |
| Upper Switch On Resistance | RDS(ON) | 175 | 250 | 330 | mΩ | VBST, VSW = 5V, TJ = 25C | 3 |
| Upper Switch On Resistance (full temp) | RDS(ON) | 160 | | 400 | mΩ | VBST, VSW = 5V | 3 |
| Upper Switch Leakage | ISW | | | 1 | μA | VEN = 0V, VSW = 0V | 3 |
| Current Limit | ILIM | 1.9 | 2.3 | 4.5 | A | TJ = 25C, Duty Cycle ≤ 60% | 3 |
| Current Limit (full temp) | ILIM | 1.8 | | 4.7 | A | Duty Cycle ≤ 60% | 3 |
| VIN UVLO Threshold | | 2.7 | 3 | 3.3 | V | TJ = 25C | 3 |
| VIN UVLO Threshold (full temp) | | 2.4 | 3 | 3.6 | V | | 3 |
| Soft-Start Time | | | 0.19 | 0.5 | ms | 0V < VFB < 0.8V | 3 |
| Oscillator Frequency | fSW | 0.8 | 1 | 1.2 | MHz | RFREQ = 95kΩ, TJ = 25C | 3 |
| Oscillator Frequency (full temp) | fSW | 0.7 | | 1.3 | MHz | RFREQ = 95kΩ | 3 |
| Shutdown Supply Current | IS | | 12 | 20 | µA | VEN < 0.3V | 3 |
| Quiescent Supply Current | IQ | | 140 | 200 | µA | No load, VFB = 0.9V (no switching) | 3 |
| EN Rising Threshold | | 1.4 | 1.55 | 1.7 | V | TJ = 25C | 3 |
| EN Rising Threshold (full temp) | | 1.3 | | 1.8 | V | | 3 |
| COMP to Current Sense Transconductance | GCS | | 5.7 | | A/V | | 3 |
| Error Amp Voltage Gain | | | 400 | | V/V | | 3 |
| Error Amp Transconductance | | | 120 | | µA/V | ICOMP = ±3µA | 3 |
| Error Amp Min Source current | | | 10 | | µA | VFB = 0.7V | 3 |
| Error Amp Min Sink current | | | -10 | | µA | VFB = 0.9V | 3 |
| VIN UVLO Hysteresis | | | 0.35 | | V | | 3 |
| Thermal Shutdown | | | 150 | | C | Hysteresis = 20C | 3 |
| Minimum Off Time | TOFF | | 100 | | ns | | 3 |
| Minimum On Time | TON | | 100 | | ns | | 3 |
| EN Threshold Hysteresis | | | 320 | | mV | | 3 |
| Supply Voltage | VIN | -0.3 | | 60 | V | | 2 |
| BST to SW | | -0.3 | | 5 | V | | 2 |
| All Other Pins | | -0.3 | | 5 | V | | 2 |
| Continuous Power Dissipation SOIC8E | | | | 2.5 | W | TA = +25°C | 2 |
| Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature | | -65 | | 150 | °C | | 2 |
| Supply Voltage VIN | VIN | 3.8 | | 55 | V | | 2 |
| Output Voltage VOUT | VOUT | 0.8 | | 52 | V | | 2 |
| Operating Junction Temperature | TJ | -40 | | 125 | °C | | 2 |
| Thermal Resistance Junction-Ambient SOIC8 (Exposed Pad) | θJA | | 50 | | °C/W | Measured on JESD51-7 4-layer board | 2 |
| Thermal Resistance Junction-Case SOIC8 (Exposed Pad) | θJC | | 10 | | °C/W | Measured on JESD51-7 4-layer board | 2 |
## CAD (KiCad official)
- Symbol: `MPQ4559DN-LF-Z`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files: `mpq4559dn-lf-z-etched.step` / `mpq4559dn-lf-z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpq4559dn-lf-z.step` / `mpq4559dn-lf-z.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Monolithic Power Systems datasheet](docs/mpq4559dn-lf-z-datasheet.pdf) (19 pp, sha256 `022a6df274a2c6c7`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mpq4559dn-lf-z-datasheet.pdf)