component
MPQ24833-BGN-AEC1-Z
Public Made by Adomby adom
MONOLITHIC POWER SYSTEMS (MPS) Global Sourcing Parts, SOIC-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMPQ24833-BGN-AEC1-Z
MONOLITHIC POWER SYSTEMS (MPS) · Global Sourcing Parts · SOIC-8-EP
MPQ24833-BGN-AEC1-Z from MONOLITHIC POWER SYSTEMS (MPS), in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Supply voltage input operating from 4.5V to 55V unregulated (with respect to VSS); needs an input capacitor to prevent large voltage spikes. |
| 2 | VSS | power_in | Power return and voltage reference for the regulated output; connect to the lowest potential in the circuit, typically the Schottky rectifier anode, and the exposed pad is also connected to VSS. |
| 3 | OVP | input | Over-voltage protection input programmed by a voltage divider, with a 2.43V shutdown threshold and a 0.2V to 2.43V normal programming range; below 0.2V with FB below 0.1V it is treated as a short circuit and the frequency folds back. |
| 4 | FB | input | LED current feedback input that senses the current across the sensing resistor between FB and VSS, with a 0.2V regulation voltage. |
| 5 | EN/DIM | input | On/off and dimming input referenced to INGND; above 0.8V turns on the chip, LED current rises from 0% to 100% as it goes from 0.75V to 1.5V, and PWM dimming uses a 100Hz to 2kHz signal above 1.7V. |
| 6 | INGND | power_in | Input ground reference for the EN/DIM signal. |
| 7 | BST | passive | Bootstrap pin; connect a 100nF or greater ceramic capacitor between SW and BST to form a floating supply for the power switch driver. |
| 8 | SW | output | Switch output that is the source of the internal MOSFET; connect to the power inductor and the cathode of the rectifier diode. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MONOLITHIC POWER SYSTEMS (MPS) |
| Package | SOIC-8-EP |
| Category | Global Sourcing Parts |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Feedback voltage | VFB | 0.19 | 0.2 | 0.21 | V | 4.5V ≤ VIN ≤ 55V | 6 |
| Feedback current | IFB | -100 | 100 | nA | VFB = 0.22V | 6 | |
| Switch on resistance | RDS(ON) | 150 | 280 | mΩ | 6 | ||
| Switch leakage | 1 | μA | VEN = 0V, VSW = 0V | 6 | |||
| Current limit | 4.2 | 6 | A | Not tested in production | 6 | ||
| Oscillator frequency | fSW | 294 | 420 | 546 | kHz | 6 | |
| Maximum duty cycle | 85 | 91 | 97 | % | 6 | ||
| Under-voltage lockout rising threshold | 2.9 | 3.3 | 3.7 | V | 6 | ||
| Minimum EN dimming threshold | 0.6 | 0.75 | 0.9 | V | VFB = 0V | 6 | |
| Maximum EN dimming threshold | 1.3 | 1.5 | 1.7 | V | VFB = 0.2V | 6 | |
| Supply current (quiescent) | IQ | 0.6 | 1 | mA | VEN = 2V, VFB = 1V | 6 | |
| Supply current at EN off | Ioff | 6 | 12 | μA | VEN = 0V | 6 | |
| Open LED OV threshold | VOVP_th | 2.3 | 2.43 | 2.6 | V | 6 | |
| Foldback frequency | 120 | kHz | VFB = 0V, VOVP = 0V | 6 | |||
| Minimum on time | tON | 100 | ns | Not tested in production | 6 | ||
| UVLO threshold hysteresis | 200 | mV | 6 | ||||
| EN input current | 2.1 | μA | VEN = 2V | 6 | |||
| EN off threshold | 0.4 | V | VEN falling, with respect to INGND | 6 | |||
| EN on threshold | 0.7 | V | VEN rising, with respect to INGND | 6 | |||
| Thermal shutdown | 175 | °C | Not tested in production | 6 | |||
| Thermal shutdown recovery hysteresis | 30 | °C | Not tested in production | 6 | |||
| Open LED OV hysteresis | VOVP_hys | 80 | mV | 6 | |||
| Supply voltage (operating) | VDD - VSS | 4.5 | 55 | V | 5 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 5 | ||
| Supply voltage | VDD - VSS | 57 | V | 5 | |||
| SW voltage | VSW - VSS | -0.3 | V | -0.3V to VIN + 0.3V | 5 | ||
| EN/DIM to INGND | VEN/DIM - VINGND | -0.3 | 6 | V | 5 | ||
| INGND to VSS | VINGND - VSS | -0.3 | 57 | V | 5 | ||
| Other pins to VSS | -0.3 | 6 | V | 5 | |||
| Junction temperature | TJ | 150 | °C | 5 | |||
| Storage temperature | -65 | 150 | °C | 5 | |||
| ESD HBM | -1.8 | 1.8 | kV | human body model | 5 | ||
| ESD CDM | -750 | 750 | V | charged device model | 5 | ||
| Thermal resistance junction-case (EVB) | θJC | 6 | °C/W | EVQ24833-B-00A | 5 |
CAD (KiCad official)
- Symbol:
MPQ24833-BGN-AEC1-Z - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files:
mpq24833-bgn-aec1-z-etched.step/mpq24833-bgn-aec1-z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpq24833-bgn-aec1-z.step/mpq24833-bgn-aec1-z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MONOLITHIC POWER SYSTEMS (MPS) datasheet (24 pp, sha256
cba1bf21f1b58969, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).