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Ray Publish 0.1.0 6e890ba 17d ago

MPG80N08

Minos · MOSFETs · TO-220

MPG80N08 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20 V, threshold 2 to 4 V at ID=250μA.
2 D passive Drain (also connected to the metal tab); VDS rated 80 V, continuous ID 80 A, pulsed 240 A.
3 S passive Source; the body diode is connected from source to drain, with forward voltage of 1.2 V max at IS=30 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 80 A TA=25℃ 1
Drain Current-Pulsed IDM 240 A Note 1 1
Maximum Power Dissipation PD 125 W Tc=25℃ 1
Single pulse avalanche energy EAS 280 mJ Tj=25℃,VDD=20V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.2 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=80V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 12 14 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 17.4 S VDS=10V,ID=15A 2
Input Capacitance Clss 3000 pF VDS=25V,VGS=0V, f=1.0MHz 2
Output Capacitance Coss 220 pF VDS=25V,VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 190 pF VDS=25V,VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 12 nS VDD=30V, ID=2A, VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 9 nS VDD=30V, ID=2A, VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 20 nS VDD=30V, ID=2A, VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 18 nS VDD=30V, ID=2A, VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 64 nC VDS=40V,ID=30A VGS=10V 2
Gate-Source Charge Qgs 20 nC VDS=40V,ID=30A VGS=10V 2
Gate-Drain Charge Qgd 20 nC VDS=40V,ID=30A VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2

CAD (KiCad official)

  • Symbol: MPG80N08
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mpg80n08-etched.step / mpg80n08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpg80n08.step / mpg80n08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (8 pp, sha256 e03c139e0337abfb, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF