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MPG40N10P

Public Made by Adom

by adom

Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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viewers mpg40n10p: viewers · Ray 10d ago
mpg40n10p-etched.glb Publish 0.1.0 · Ray 10d ago
mpg40n10p-etched.step mpg40n10p: factory component page (tier=lcsc) · Ray 10d ago
mpg40n10p-hero.glb mpg40n10p: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
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mpg40n10p.lbr Publish 0.1.0 · Ray 10d ago
mpg40n10p.step Publish 0.1.0 · Ray 10d ago
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MPG40N10P

Minos · MOSFETs · TO-220

MPG40N10P from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with VGS(th) of 2 V min to 4 V max at ID=250μA.
2 D passive Drain, which is also connected to the metal tab; VDS rated 100 V and continuous ID 40 A.
3 S passive Source; RDS(ON) is below 30 mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25℃ unless otherwise noted; printed as ±20 1
Drain Current-Continuous ID 40 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM 100 A Note 1 (repetitive rating: pulse width limited by maximum junction temperature) 1
Maximum Power Dissipation PD 70 W Tc=25℃ 1
Single pulse avalanche energy EAS 96 mJ Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 3.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=12A (Note 3) 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=20A 2

CAD (KiCad official)

  • Symbol: MPG40N10P
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mpg40n10p-etched.step / mpg40n10p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpg40n10p.step / mpg40n10p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (7 pp, sha256 dbd10906a05faaa7, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF