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Ray Publish 0.1.0 3fd7d84 13d ago

MPG30P10P

Minos · MOSFETs · TO-220

MPG30P10P from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to +/-20 V, with threshold VGS(th) of -1.0 V min, -2.0 V typ, -3.0 V max at ID=-250µA.
2 D passive Drain (also the mounting tab); VDSS is -100 V, continuous ID -30 A at Tc=25℃ and pulsed IDM -120 A.
3 S passive Source; body diode continuous current ISD is -35 A and pulsed ISDM is -140 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS -100 V 1
Drain Current (continuous) ID -30 A at Tc=25℃ 1
Drain Current (pulsed) IDM -120 A 1
Gate to Source Voltage VGS -20 20 V printed +/-20 1
Total Dissipation Ptot 180 W at Tc=25℃ 1
Max. Operating Junction Temperature Tj 175 ℃ 1
Single Pulse Avalanche Energy EAS 700 mJ 1
Drain-source Voltage VDS -100 V VGS =0V, ID=-250µA 2
Static Drain-to-Source on-Resistance RDS(on) 26 32 mΩ VGS =-10V, ID=-15A 2
Gated Threshold Voltage VGS(th) -1 -2 -3 V VDS=VGS, ID=-250µA 2
Drain to Source leakage Current IDSS -1 µA VDS=-100V, VGS = 0V 2
Gated Body Foward Leakage IGSS(F) 100 nA VGS = +20V 2
Gated Body Reverse Leakage IGSS(R) -100 nA VGS = -20V 2
Input Capacitance Ciss 2315 pF VGS =0V, VDS=25V, f=1.0MHZ 2
Output Capacitance Coss 190 pF VGS =0V, VDS=25V, f=1.0MHZ 2
Reverse Transfer Capacitance Crss 11 pF VGS =0V, VDS=25V, f=1.0MHZ 2
Turn-on Delay Time td(on) 28 nS VDD=-20V,ID=-16A, RG=10Ω 2
Turn-on Rise Time tr 21 nS VDD=-20V,ID=-16A, RG=10Ω 2
Turn-off Delay Time td(off) 62 nS VDD=-20V,ID=-16A, RG=10Ω 2
Turn-off Fall Time tf 32 nS VDD=-20V,ID=-16A, RG=10Ω 2
Total Gate Charge Qg 40 nC VDS=-20V ID=-16A VGS=-10V 2
Gate-Source Charge Qgs 9.2 nC VDS=-20V ID=-16A VGS=-10V 2
Gate-Drain Charge Qgd 14 nC VDS=-20V ID=-16A VGS=-10V 2
S-D Current (Body Diode) ISD -35 A 2
Pulsed S-D Current (Body Diode) ISDM -140 A 2
Diode Forward Voltage VSD -1.5 V VGS =0V, IDS=-35A 2
Reverse Recovery Time trr 555 nS TJ=25℃,IF=-35A, di/dt=100A/us 2
Reverse Recovery Charge Qrr 4550 µC TJ=25℃,IF=-35A, di/dt=100A/us 2
Junction-to-Case RθJC 2.5 ℃/W 2

CAD (KiCad official)

  • Symbol: MPG30P10P
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mpg30p10p-etched.step / mpg30p10p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpg30p10p.step / mpg30p10p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (4 pp, sha256 3ac5feae315c7cd6, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF