component
MPG08N68S
Public Made by Adomby adom
Minos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MPG08N68S
Minos · MOSFETs · TO-263
MPG08N68S from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the package tab; VDS 68 V max, ID 100 A continuous and 340 A pulsed. |
| 3 | S | passive | Source; RDS(ON) is below 7.5 mΩ at VGS=10V, and the body diode runs from source to drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=68V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 6.5 | 7.5 | mΩ | VGS=10V, ID=45A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=90A | 2 | ||
| Drain-Source Voltage | VDS | 68 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 100 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 340 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 370 | mJ | Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.2 | ℃/W | 2 | |||
| Forward Transconductance | GFS | 20 | S | VDS=10V,ID=20A | 2 | ||
| Input Capacitance | Clss | 3200 | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 440 | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 180 | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 16 | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 95 | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 47 | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 31 | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 | ||
| Total Gate Charge | Qg | 40 | nC | VDS=30V,ID=20A,VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS=30V,ID=20A,VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VDS=30V,ID=20A,VGS=10V | 2 |
CAD (KiCad official)
- Symbol:
MPG08N68S - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
mpg08n68s-etched.step/mpg08n68s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpg08n68s.step/mpg08n68s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
27a236eed27302eb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MPG08N68S
**Minos** · MOSFETs · TO-263
MPG08N68S from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the package tab; VDS 68 V max, ID 100 A continuous and 340 A pulsed. |
| 3 | S | passive | Source; RDS(ON) is below 7.5 mΩ at VGS=10V, and the body diode runs from source to drain. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 68 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=68V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 6.5 | 7.5 | mΩ | VGS=10V, ID=45A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=90A | 2 |
| Drain-Source Voltage | VDS | | | 68 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | 100 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | | | 340 | A | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 125 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 370 | mJ | Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.2 | | ℃/W | | 2 |
| Forward Transconductance | GFS | | 20 | | S | VDS=10V,ID=20A | 2 |
| Input Capacitance | Clss | | 3200 | | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss | | 440 | | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 180 | | pF | VDS=30V,VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 16 | | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 |
| Turn-on Rise Time | tr | | 95 | | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 47 | | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 |
| Turn-Off Fall Time | tf | | 31 | | nS | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω | 2 |
| Total Gate Charge | Qg | | 40 | | nC | VDS=30V,ID=20A,VGS=10V | 2 |
| Gate-Source Charge | Qgs | | 11 | | nC | VDS=30V,ID=20A,VGS=10V | 2 |
| Gate-Drain Charge | Qgd | | 15 | | nC | VDS=30V,ID=20A,VGS=10V | 2 |
## CAD (KiCad official)
- Symbol: `MPG08N68S`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `mpg08n68s-etched.step` / `mpg08n68s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpg08n68s.step` / `mpg08n68s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](docs/mpg08n68s-datasheet.pdf) (7 pp, sha256 `27a236eed27302eb`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mpg08n68s-datasheet.pdf)