# MPD04N65

**miracle** · MOSFETs · TO-252

MPD04N65 from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2 to 4 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; 650 V drain-source voltage, 4 A continuous at TC = 25°C (16 A pulsed), also connected to the exposed tab. |
| 3 | S | passive | Source; connects to the body diode anode with continuous diode current IS up to 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 650 | V | TJ=+25 °C to +150 °C (note a) | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 4 | A | TC=25 °C | 1 |
| Drain Current-Continuous | ID |  |  | 2.5 | A | TC=100 °C | 1 |
| Drain Current-Pulsed | IDM |  |  | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature (note b) | 1 |
| Maximum Power Dissipation | PD |  |  | 77 | W | TJ=25 °C | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 180 | mJ | L=10mH, VDD=50V, IAS=6A, RG=25Ω, starting TJ=25 °C (note c) | 1 |
| Operating and Store Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-Case | RθJC |  |  | 1.62 | °C/W |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 110 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 650V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±30V | 1 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 2.3 | 2.7 | Ω | VGS = 10V, ID = 2A | 2 |
| Drain-Source Diode Forward Continuous Current | IS |  |  | 4 | A | VGS = 0V | 2 |
| Maximum Pulsed Current | ISM |  |  | 16 | A | VGS = 0V | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS = 0V, IS = 4A | 2 |

## CAD (KiCad official)

- Symbol: `MPD04N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mpd04n65-etched.step` / `mpd04n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpd04n65.step` / `mpd04n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [miracle datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602905575714418688) (5 pp, sha256 `6c10640061f43ac9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mpd04n65-datasheet.pdf)