component
MP9N20
Public Made by Adomby adom
Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11d ago |
| viewers | 11d ago |
| mp9n20-etched.glb | 11d ago |
| mp9n20-etched.step | 11d ago |
| mp9n20-hero.glb | 11d ago |
| mp9n20-hero.overlay.json | 11d ago |
| mp9n20.glb | 11d ago |
| mp9n20.kicad_mod | 11d ago |
| mp9n20.kicad_sym | 11d ago |
| mp9n20.lbr | 11d ago |
| mp9n20.step | 11d ago |
| package.json | 11d ago |
| page.json | 11d ago |
| README.md | 11d ago |
MP9N20
Minos · MOSFETs · TO-220
MP9N20 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±30 V, with a threshold of 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; drain-to-source voltage is 200 V maximum and continuous drain current is 9 A at TC = 25 °C. |
| 3 | S | passive | Source; the body diode carries a continuous source current of 9 A and a pulsed current of 36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 200 | V | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 9 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 5.5 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | Note1 | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Note2: L=20mH, VDS=50V, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3 | 1 | ||
| Power Dissipation | PD | 75 | W | TO-220, TO-251, TO-252 | 2 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Thermal Resistance Junction-to-Case | RθJC | 1.67 | ℃/W | No FullPAK TO-220 | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 62.5 | ℃/W | No FullPAK TO-220 | 2 | ||
| Drain to Source Breakdown Voltage | VDSS | 200 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =200V, VGS= 0V, Tj = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS=160V, VGS= 0V, Tj = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS =-30V | 3 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.27 | 0.32 | Ω | VGS=10V, ID=4A (Note4) | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA (Note4) | 3 | |
| Continuous Source Current (Body Diode) | IS | 9 | A | TC=25 °C | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 36 | A | TC=25 °C | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=9A, VGS=0V (Note4) | 3 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.25 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Gate resistance | Rg | 3.5 | Ω | f = 1.0MHz | 3 | ||
| Input Capacitance | Ciss | 550 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 90 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 8.6 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | 3 | ||
| Turn-on Delay Time | td(ON) | 10 | ns | ID =9A, VDD = 100V, VGS = 10V, RG =5Ω | 3 | ||
| Rise Time | tr | 5 | ns | ID =9A, VDD = 100V, VGS = 10V, RG =5Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 20 | ns | ID =9A, VDD = 100V, VGS = 10V, RG =5Ω | 3 | ||
| Fall Time | tf | 7 | ns | ID =9A, VDD = 100V, VGS = 10V, RG =5Ω | 3 | ||
| Total Gate Charge | Qg | 12 | nC | ID =9A, VDD =160V, VGS = 10V | 3 | ||
| Gate to Source Charge | Qgs | 3 | nC | ID =9A, VDD =160V, VGS = 10V | 3 | ||
| Gate to Drain (Miller) Charge | Qgd | 6 | nC | ID =9A, VDD =160V, VGS = 10V | 3 | ||
| Reverse Recovery Time | Trr | 110 | ns | IS=9A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 | ||
| Reverse Recovery Charge | Qrr | 465 | nC | IS=9A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 |
CAD (KiCad official)
- Symbol:
MP9N20 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mp9n20-etched.step/mp9n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mp9n20.step/mp9n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (12 pp, sha256
e0d080c1d1eef87c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).