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Contents

README

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MP5418AGQG-Z

Monolithic Power Systems · DC-DC Converters · QFN-10(1.4x1.8)

MP5418AGQG-Z from Monolithic Power Systems, in a QFN-10(1.4x1.8). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Power ground.
2 EN input On/off control; enable above 1.2V, disable by floating or pulling to ground (internal 1MΩ resistor to GND), logic low below 0.4V.
3 CTL input Analog input voltage; the VOUT2 voltage is -1x the CTL pin voltage.
4 TM passive Test mode pin for factory use only; float TM or connect it to GND, and do not connect it to other pins.
5 VOUT2 power_out Negative linear regulator output (0V to VOUT1) that requires a decoupling capacitor, with 200mA typical load capability shared with VOUT1.
6 GND power_in Power ground.
7 VOUT1 power_out Negative charge pump output equal to -1x VIN that needs a decoupling capacitor, with absolute maximum rating of -6V to +0.3V.
8 CN passive Fly capacitor negative terminal.
9 CP passive Fly capacitor positive terminal, rated -0.3V to VIN + 0.3V.
10 IN1 power_in Supply voltage input operating from 2.3V to 5V unregulated, requiring a decoupling capacitor to prevent large voltage spikes.

Key specifications

Parameter Value
Manufacturer Monolithic Power Systems
Package QFN-10(1.4x1.8)
Category Power Management (PMIC)
Pins 10

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (absolute max) VIN 6 V 3
CP pin voltage VCP -0.3 V max is VIN + 0.3V 3
VOUT1 voltage VOUT1 -6 0.3 V 3
All other pins (except pin 4) -0.3 6 V 3
Junction temperature TJ 150 °C 3
Lead temperature 260 °C 3
Continuous power dissipation PD 1.47 W TA = 25°C 3
Storage temperature TSTG -65 150 °C 3
ESD HBM -2 2 kV Human body model 3
ESD CDM -2 2 kV Charged device model 3
Supply voltage (operating) VIN 2.3 5 V 3
Operating junction temperature TJ -40 125 °C 3
Thermal resistance junction-ambient θJA 140 °C/W JESD51-7 3
Thermal resistance junction-case θJC 30 °C/W JESD51-7 3
VIN Range VIN 2.3 5 V VIN = 3.3V, TJ = -40°C to +125°C 4
Under-voltage lockout rising threshold 2.2 2.3 V 4
Under-voltage lockout hysteresis threshold 100 180 260 mV 4
Shutdown supply current 1.5 3 μA VEN = 0V 4
Quiescent supply current 650 960 1270 μA VEN = 2V, no load, TJ = 25°C 4
Quiescent supply current 600 960 1320 μA VEN = 2V, no load, TJ = -40°C to +125°C 4
Charge pump frequency 320 455 590 kHz Detect VIN and VOUT1, TJ = 25°C 4
Charge pump frequency 250 590 kHz Detect VIN and VOUT1, TJ = -40°C to +125°C 4
Charge pump current limit 0.6 1 A 4
Load current limit 200 250 mA VIN = 3.3V, VOUT2 = -2.5V 4
Output accuracy -1 1 % Compared with CTL voltage, TJ = 25°C, IOUT2 = 10mA 4
Output accuracy -2 2 % Over temp, IOUT2 = 10mA 4
Output offset -20 20 mV IOUT2 = 10mA, TJ = 25°C 4
Dropout voltage VDROP 30 90 mV VIN = 2.5V, IOUT2 = 60mA 4
Dropout voltage VDROP 20 80 mV VIN = 3.3V, IOUT2 = 60mA 4
Load regulation 0.005 0.01 %/mA VOUT1 = -3.3V, CTL = 1V 4
EN turn-on delay 135 285 μs 4
EN input logic low voltage 0.4 V 4
EN input logic high voltage 1.2 V 4
Output discharge resistor RDIS1 170 310 Ω VEN = 0V, VOUT1 rail 4
Output discharge resistor RDIS2 80 146 Ω VEN = 0V, VOUT2 rail 4
EN input current 1.4 1.8 2.2 μA VEN = 2V 4
Charge pump MOSFET on resistance RON 0.24 Ω 4
PSRR 60 dB 100Hz, COUT1 = 100pF, COUT2 = 1μF, IOUT2 = 10mA 4
PSRR 50 dB 50kHz, COUT1 = 100pF, COUT2 = 1μF, IOUT2 = 10mA 4
PSRR 40 dB 300kHz, COUT1 = 100pF, COUT2 = 1μF, IOUT2 = 10mA 4
Soft-start slew rate 5 V/ms 4
EN input current 0 μA VEN = 0V 4
Thermal shutdown 160 °C 4
Thermal hysteresis 30 °C 5
Recommended input capacitance CIN 4.7 μF VIN = 3.3V 5
Recommended fly capacitor CFLY 4.7 μF 5
Recommended VOUT1 capacitor 4.7 μF 5
Recommended VOUT2 capacitor 4.7 μF 5
Output ripple VOUT1 VRIPPLE_OUT1 50 mV VIN = 3.3V, VOUT1 = -3.3V, CFLY = COUT1 = 4.7μF, IOUT1 = 60mA 5
Output ripple VOUT2 VRIPPLE_OUT2 1 mV VIN = 3.3V, VOUT2 = 2.5V, COUT2 = 1μF, IOUT2 = 60mA 5

CAD (KiCad official)

  • Symbol: MP5418AGQG-Z
  • Footprint: Package_DFN_QFN:UQFN-10_1.4x1.8mm_P0.4mm
  • 3D model: QFN-10(1.4x1.8) (KiCad packages3D, STEP)
  • 3D model files: mp5418agqg-z-etched.step / mp5418agqg-z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mp5418agqg-z.step / mp5418agqg-z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Monolithic Power Systems datasheet (16 pp, sha256 dc47f03d9251d648, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF