# MP40N20

**Minos** · MOSFETs · TO-220

MP40N20 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), threshold 2.0 to 4.0 V at ID = 250 µA, gate leakage max ±100 nA. |
| 2 | D | passive | Drain (also connected to the mounting tab); drain-source voltage 200 V max, continuous drain current 40 A, pulsed 160 A. |
| 3 | S | passive | Source; body diode continuous source current 40 A, pulsed 160 A, forward voltage max 1.4 V at IS = 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 200 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 40 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 160 | A | note1 | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 191 | mJ | note1 | 1 |
| Avalanche Current | IAS |  |  | 31 | A | note1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 124 | mJ | note1 | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 2 |
| Thermal Resistance, Junction-to-Case | RthJC |  | 1.2 |  | ºC/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  | 60 |  | ºC/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current (TJ = 25℃) | IDSS |  |  | 1 | µA | VDS=200V, VGS = 0V, TJ= 25℃ | 2 |
| Zero Gate Voltage Drain Current (TJ = 125℃) | IDSS |  |  | 100 | µA | VDS=200V, VGS=0V, TJ= 125℃ | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V，VDS = 0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.05 | 0.06 | Ω | VGS = 10V, ID = 20A | 2 |
| Continuous Source Current | ISD |  |  | 40 | A | Integral PN-diode in MOSFET | 3 |
| Pulsed Source Current | ISM |  |  | 160 | A |  | 3 |
| Body Forward Voltage | VSD |  |  | 1.4 | V | IS = 20A, VGS = 0V | 3 |

## CAD (KiCad official)

- Symbol: `MP40N20`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mp40n20-etched.step` / `mp40n20-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mp40n20.step` / `mp40n20.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590268657391087616) (8 pp, sha256 `b61755b55fb80e52`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mp40n20-datasheet.pdf)